Newly developed passivation technique of GaAs surfaces

Xiying Chen,Qianjiang Xu,Jie Wang,Wei Zhu,XianAn Cao,Fulong Zhang,Xunmin Ding,Xiaoyuan Hou,Ming L��,Hua Cao

1996-01-01

Abstract:A novel sulfur passivation technique, sulfur glow discharge plasma passivation, has been developed. By using this technique, a thick GaS layer is formed on GaAs surface. Photoluminescence measurements show that GaS is a very stable passivating layer.

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Newly Developed Passivation of GaAs Surfaces and Devices

X Wang,XY Hou,ZS Li,XM Ding,XY Chen,XN Cao

DOI: https://doi.org/10.1109/icsict.1995.503331

1995-01-01

Abstract:In addition to the established methods, we have developed three new passivation techniques. The first one is the electrochemical sulfur passivation, which can create a thick S-containing layer on the top of GaAs substrate. The thick passivation layer can prevent the GaAs surface being reoxidized in air, and thus the stability is greatly improved. The second passivation technique uses an oxygen-free sulfur-containing solvent-S2Cl2. It can remove the oxides of GaAs very effectively and create a S-terminated surface. The third technique is to form a thick GaS overlayer on the top of GaAs by using S glow discharge (SDG). The preliminary results seem to be quite encouraging. It might be possible to eventually solve the problem of surface passivation for GaAs and related III-V compound semiconductors
Passivation of Gaas Surface by Sulfur Glow Discharge

XY Hou,XY Chen,ZS Li,XM Ding,X Wang

DOI: https://doi.org/10.1063/1.117604

IF: 4

1996-01-01

Applied Physics Letters

Abstract:A new sulfur passivation technique, the sulfur vapor glow discharge, has been developed to form a thick sulfide layer on GaAs surface. By using Auger electron spectroscopy and x-ray photoelectron spectroscopy measurements, the main composition of the passivation layer is found to be gallium sulfide without the existence of unstable As–S bonds. The stability of the passivation effect is demonstrated by the nondecaying behavior of the photoluminescence intensity of the GaAs passivation surface under the illumination of the laser beam with very high intensity.
Progress In Sulfur Passivation Of Gaas Surfaces

X Wang,Xy Hou

1996-01-01

Abstract:We develop three new sulfur passivation techniques of GaAs. The first one is the electrochemical sulfur passivation, which can create a thick S-containing layer to prevent the GaAs surface to be reoxidized in air. The second technique is using an oxygen-free sulfur-containing solvent -S2Cl2. It has been successfully used as a GaAs substrate preparing technique in the heteroepitaxial growth of II-VI wide gap semiconductors to improve the epilayer quality. The third technique is the sulfur vapor glow discharge method. It might be possible to eventually solve the problem of surface passivation for GaAs.
Sulfurized Passivation of GaAs(100) Surfaces

Li Z. S.,Hou X. Y.,Cai W. Z.,Wang W.,Zhang M.,Dong G. S.,Jin X.,Wang Xun

DOI: https://doi.org/10.1557/proc-284-607

1992-01-01

Abstract:We have developed a new electrochemical passivation method to obtain a quite stable sulfide layer on GaAs surface. This layer is very thick and contains a mixture of Ga, As, S, O and H compounds. The photoluminescence (PL) spectrum of such anodic sulfurized GaAs surface shows big intensity enhancement as compared with that of as-etched GaAs samples; No visual intensity decay occurs under laser beam illumination, which maintains for more than seven months. The structure and composition of the passivation layers are investigated by the X-ray photoelectron spectroscopy and the mechanism of the layer formation is suggested.
A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

ZS LI,XY HOU,WZ CAL,W WANG,XM DING,X WANG

DOI: https://doi.org/10.1063/1.360074

IF: 2.877

1995-01-01

Journal of Applied Physics

Abstract:We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed.
New surface passivation technique of GaAs by S2Cl2 treatment

Zheshen Li,Weizhong Cai,Runzhou Su,Xiaoyuan Hou,Guosheng Dong,Xiaofeng Jin,Xunmin Ding,Xun Wang

1994-01-01

Abstract:Photoluminescence spectroscopy combined with Auger electron spectroscopy and X-ray photoelectron spectroscopy is used to study the S2Cl2-passivated GaAs(100) surface. The photoluminescence intensity increases by two orders of magnitude after this treatment, indicating a substantial reduction of surface recombination rate. Auger electron spectroscopy data show that the sulfurized surface contains S, Ga, As, C and small amount of Cl atoms but no oxygen atom at all. X-ray photoelectron spectroscopy results reveal that S atoms bond to both Ga and As atoms, and the sulfide layer is thicker than that by (NH4)2S treatment.
Electrochemical Sulfur Passivation of GaAs

XY HOU,WZ CAI,ZQ HE,PH HAO,ZS LI,XM DING,X WANG

DOI: https://doi.org/10.1063/1.107475

IF: 4

1992-01-01

Applied Physics Letters

Abstract:An anodic sulfurized treatment of GaAs has been developed to passivate its surfaces preventing oxidation. The photoemission core level spectra show that the surface Ga and As atoms are bonded to S atoms to form a thick sulfurized layer. No oxygen uptakes on the sulfurized GaAs surface as illustrated by the high resolution electron energy loss spectroscopy. The results of photoluminescence spectra verify that the passivated surface has low surface recombination velocity and can protect the photoassisted oxidation under laser illumination.
A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

ED Lu,FP Zhang,SH Xu,XJ Yu,PS Xu,ZF Han,FQ Xu,XY Zhang

DOI: https://doi.org/10.1063/1.117534

IF: 4

1996-01-01

Applied Physics Letters

Abstract:A sulfur passivation method for GaAs, CH3CSNH2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface. The enhancements of the PL intensity reveal the reduction of the surface recombination velocity and the reduction of density of defect states by this treatment. The synchrotron radiation photoemission spectroscopy measurements show that sulfur atoms bond both Ga and As atoms. After being annealed, a stable sulfur passivation layer is terminated on the surface due to the As2S3 component react with GaAs into the GaS component.
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

C. J. Sandroff,R. N. Nottenburg,J.‐C. Bischoff,R. Bhat

DOI: https://doi.org/10.1063/1.98877

IF: 4

1987-07-06

Applied Physics Letters

Abstract:With a simple chemical treatment we have passivated nonradiative recombination centers at the periphery of a GaAs/AlGaAs heterostructure bipolar transistor, resulting in a 60-fold increase in the current gain of the device at low collector currents. This large enhancement in gain was achieved by spin coating thin films of Na2S9H2O onto the devices after their fabrication. We briefly discuss the passivation mechanism and the implications for other III-V optoelectronic devices.

physics, applied
Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

Xi-ying Chen,Xiao-yuan Hou,Xian-an Cao,Xun-min Ding,Liang-yao Chen,Guo-qing Zhao,Xun Wang

DOI: https://doi.org/10.1016/S0022-0248(96)00808-1

IF: 1.8

1997-01-01

Journal of Crystal Growth

Abstract:A novel sulfur passivation of GaAs surface has been developed by using the microwave sulfur glow discharge technique. Auger electron spectroscopy and Rutherford backscattering measurements show that the passivation film is mainly composed of sulfur and gallium, with the atomic ratio of gallium to sulfur close to 1 : 1. From X-ray diffraction measurement, the crystalline structure of GaS is identified to be polycrystalline hexagonal phase. The refractive index and dielectric constant of GaS have been measured. The breakdown strength of the GaS film is above 106 V/cm, which proves that GaS might also be used as an insulating film in the metal-insulator-semiconductor structure.
S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

ZS LI,WZ CAI,RZ SU,GS DONG,DM HUANG,XM DING,XY HOU,X WANG

DOI: https://doi.org/10.1063/1.111261

IF: 4

1994-01-01

Applied Physics Letters

Abstract:We have developed a new sulfur passivation method-S2Cl2 treatment, which is quite effective for removing the surface oxide layer of GaAs and passivating the surface with monolayer thick sulfides. Photoluminescence (PL) spectroscopy, Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS) are used to study the passivated GaAs (100) surfaces. The results of PL reveal that the PL intensity increases by two orders of magnitude, which is indicative of the reduction of surface recombination velocity of GaAs by this treatment. AES data prove that the sulfurized surface contains S, Ga, As, C, and small amount of Cl atoms but no oxygen signal at all. XPS study shows that sulfur atoms bond to both Ga and As atoms more effectively on S2Cl2 treated surfaces than those passivated by (NH4)2Sx.
X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

X Wang,XY Hou,ZS Li,XY Chen

DOI: https://doi.org/10.1002/(sici)1096-9918(19960916)24:9<564::aid-sia148>3.0.co;2-1

1996-01-01

Surface and Interface Analysis

Abstract:Three new sulphur-passivation techniques of GaAs surfaces are presented to solve the problem of longevity and durability. To explore the passivation mechanism, XPS in conjunction with other techniques are employed to study the chemical compositions of Ga and As atoms near the passivation film/substrate interfaces.
The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

HT Hu,XA Cao,XM Ding,XY Hou

1999-01-01

Abstract:An efficient passivation technique has been developed to grow stable hexagonal GaS on the GaAs(100) surfaces by vaporizing alpha-Ga2S3. Both good crystal quality and clean GaS/GaAs interface were achieved. X-ray photoelectron spectroscopy (XPS) was used to study the chemical composition near the passivation film/substrate interface. Electron-energy-loss spectra showed that the sulfide material has a bandgap of 3.0 eV. The valence band discontinuity of the heterostructure was determined to be 1.9 eV from a series of ultraviolet photoelectron spectra with increasing deposition thickness. An increase by two orders of magnitude in the photoluminescence (PL) yield of the GaS-passivated GaAs was observed. Al/GaS/GaAs metal-insulator-semiconductor structures exhibited typical high frequency capacitor versus voltage (C-V) behavior with very small loop hysteresis. The C-V curves showed no aging after 20 months.
Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

Y Dong,Xm Ding,Xy Hou,Y Li,Xb Li

DOI: https://doi.org/10.1063/1.1331642

IF: 4

2000-01-01

Applied Physics Letters

Abstract:A passivation technique consisting of a (NH4)2S dip followed by GaS deposition has been applied to a GaAs microwave-power metal–semiconductor field-effect transistor (MESFET). The breakdown characteristic of the MESFET is greatly improved upon the (NH4)2S treatment, and a stable passivation effect can be achieved by GaS film deposition. It is found that the FET current–voltage characteristics are closely related to variations in the pinning position of the GaAs surface Fermi level. With the surface passivated, a depletion layer can be properly formed and protected, which is of benefit to the control of the device parameters.
Passivation of the GaAs(100) surface with a vapor-deposited GaS film

xianan cao,haitian hu,xunmin ding,zeliang yuan,yang dong,xiying chen,bing lai,xiaoyuan hou

DOI: https://doi.org/10.1116/1.590251

1998-01-01

Abstract:A vapor-deposited GaS passivating layer is formed on GaAs(100) with alpha-Ga2S3 powder used as a single-source precursor for the deposition. The films grown show near-single-crystal quality, and are characterized by Auger electron spectroscopy and x-ray diffraction spectroscopy. The band-edge discontinuities of the GaS/GaAs heterojunction are determined to be 1.9 eV for the valence band and 0.3 eV for the conduction band, respectively, by ultraviolet photoelectron spectroscopy and electron-energy-loss spectroscopy. It is also observed that the valence-band structure of the GaS overlayer becomes much sharper after annealing. (C) 1998 American Vacuum Society. [S0734-211X(98)04205-X].
Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

E.D. Lu,S.H. Xu,P.S. Xu,X.J. Yu,F.P. Zhang,H.B. Pan,X.Y. Zhang,T.X. Zhao,T.P. Zhao

DOI: https://doi.org/10.1016/0368-2048(96)02951-9

IF: 1.993

1996-01-01

Journal of Electron Spectroscopy and Related Phenomena

Abstract:A new sulfur passivation method for GaAs, CH3CSNH2 treatment, has been developed. By Synchrotron Radiation Photoemission Spectroscopy(SRPES), the chemical states and electronic aspects of the passivated surfaces are investigated. It is found that the oxide layer of the GaAs is effectively removed, and Sulfur atoms bond both to Ga and As atom at room temperature. In addition, the behavior of Mg deposited on the passivated surfaces with and without annealing has been investigated. It is found that Ga atoms can be exchanged from GaS bond, and diffuse into Mg overlayer, but the sulfur atoms remain at the interfaces. At higher Mg coverage, a MgGa alloy may be formed due to excess Mg atoms reacting with Ga atoms at the overlayer.
Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

Cai W. Z.,Li Z. S.,Wang J.,Qureshi Aziz Ul-Haq,Wang Xun

DOI: https://doi.org/10.1557/PROC-326-335

1993-01-01

Abstract:A new sulfur passivation technique for GaAs surface by using S2Cl2 instead of (NH4)2Sx has been developed. Auger electron spectroscopy verifies the passivated surface is almost completely free of oxygen. The results of X-ray photoelectron spectroscopy indicate a relatively strong bonding between S and substrate atoms. A clean surface can be achieved by annealing in vacuum at 600°C. ZnSe thin films grown by hot wall epitaxy on S2Cl2 passivated GaAs show improved crystalline quality compared with those treated by conventional method, as indicated by Raman scattering measurements.
PROPERTIES OF GaS GROWN BY MICROWAVE-GLOW DISCHARGE

Chen Xi-Ying,Cao Xian-An,Ding Xun-Min,Hou Xiao-Yuan,Chen Liang-Yao,Zhao Guo-Qing

DOI: https://doi.org/10.7498/aps.46.826

1997-01-01

Abstract:A novel passivation film on GaAs surface has been grown by microwave sulfur glow discharge technique.Auger electron spectroscopy and Rutherford back scattering measurements show that the film is mainly composed of sulfur and gallium,and atomic ratio of gallium to sulfur is about 1∶1.From X-ray diffraction spectroscopy measurememt,GaS is identified to be hexagonal polycrystalline material.The refraction index and dielectric constant of GaS have also been determined.
SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

Erdong Lu,Pengshou Xu,Shihong Xu,Xiaojing Yu,Haibin Pan,Xinyi Zhang,Tianpeng Zhao,Texiu Zhao

1996-01-01

Abstract:A new sulfur passivating method for GaAs, CH3CSNH2 treatment, has been developed. We have investigated the chemical bonds and electronic states of the GaAs surface by Synchrotron Radiation Photoelectron Spectroscopy (SRPES). The results show that the sulfides of Ga and As are formed on GaAs surface, and this treatment has an apparently passivating role. For the annealed S/GaAs system, the As sulfides are decomposed or further react with bulk GaAs into elemental As and GaS at RT. Mg deposition on passivation surface after annealing is also investigated. It is found that Ga atoms can be displaced from Ga-S bonds by Mg atoms, and diffuse into Mg overlayer, but sulfur atoms remain at interface. Band bending effect during Mg deposition, that is, the Ef movement is measured to be 0.5eV toward valence band maximum.
Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth

Jingjing Shen,Haitao Chen,Jun He,Yejun Li,Xinhui Yang,Mengjian Zhu,Xiaoming Yuan

DOI: https://doi.org/10.1063/5.0185838

IF: 4

2024-03-18

Applied Physics Letters

Abstract:Gallium arsenide (GaAs) is an important compound semiconductor for optoelectronic devices. However, the fast nonradiative recombination velocity of GaAs requires surface passivation for the nano-optoelectronic and nanophotonic applications. Despite strides have been made in GaAs surface passivation, chemical treatments like sulfidation and nitridation suffer from reproducibility and stability issues, thus requiring protective layer encapsulation. Traditional vacuum based film passivation exposes samples to high temperature plasma, causing surface damage, and is expensive. Here, we demonstrate an effective passivation method via sol-gel growth of SiO2 shell on both dry etched GaAs nanopillar and bottom-up grown GaAs nanowires at room temperature with uniform coating and controlled thickness from sub-10 nm to around 100 nm, showing advantages in low cost as well as suitability for different types of nano morphology. X-ray photoelectron spectroscopy analysis confirms that the SiO2 sol-gel method with the addition of (NH4)2S can significantly remove the native oxides on the surface. Under the optimized SiO2 coating procedure, the emission intensity of dry etched GaAs nanopillar with a diameter of 0.5 μm is enhanced about 29.6 times and the decay lifetime of the minority carriers with a diameter of 1.8 μm increased from 43.6 to 477.5 ps. Thus, the easy fabrication, broad suitability, as well as effective passivation effect turn sol-gel growth of SiO2 into a cost-effective surface passivation approach for III–V nanostructures.

physics, applied

Newly developed passivation technique of GaAs surfaces

Newly Developed Passivation of GaAs Surfaces and Devices

Passivation of Gaas Surface by Sulfur Glow Discharge

Progress In Sulfur Passivation Of Gaas Surfaces

Sulfurized Passivation of GaAs(100) Surfaces

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

New surface passivation technique of GaAs by S2Cl2 treatment

Electrochemical Sulfur Passivation of GaAs

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

Passivation of the GaAs(100) surface with a vapor-deposited GaS film

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

PROPERTIES OF GaS GROWN BY MICROWAVE-GLOW DISCHARGE

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth