Abstract:We present the results of Auger electron spectroscopy (AES), low-energy electron diffraction (LEED) and atomic force microscopy (AFM) analysis of sulfur-passivating layers on the GaAs (100) surface. The GaAs surfaces were passivated with both inorganic [(NH4)(2)S-x] and organic [octadecylthiol (ODT)] S-based compounds. We prepared the inorganic sulfur-passivated GaAs(100) surfaces with a wet chemical treatment using (NH4)(2)S solution. This was followed by thermal annealing of the treated sample in an ultrahigh vacuum (UHV). After ex-situ and in-situ treatments, the surface resulted in a (2 x 1) LEED pattern. The LEED data (I-E curves) were recorded and compared with dynamical LEED calculations for different structural models for the sulfur-passivated GaAs (100) surface. The results showed that the sulfur-passivated (2 x 1) surface structure is an arsenic-sulfur dimer on a Ga-terminated substrate. The ex-situ AFM results also revealed a (2 x 1) structure for the inorganic passivation and a very smooth surface for the organic ODT in the ethanol-treated sample. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

Progress In Sulfur Passivation Of Gaas Surfaces

Electrochemical Sulfur Passivation of GaAs

Newly Developed Passivation of GaAs Surfaces and Devices

Sulfurized Passivation of GaAs(100) Surfaces

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

Newly developed passivation technique of GaAs surfaces

Passivation of Gaas Surface by Sulfur Glow Discharge

New surface passivation technique of GaAs by S2Cl2 treatment

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT

A NEW METHOD:CH 3 CSNH 2 /NH 4 OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION

Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Study of HREELS and XPS on sulfide passivated GaAs (100) surface

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface