Abstract:Organic hybrid CH3NH3PbBr3 (MAPbBr3) perovskite single crystal (SC) is popular in the field of photoelectric detection due to its outstanding photoelectric properties, but its performance is seriously limited by surface defects. Here, we report a surface passivation method to effectively reduce the surface defects by immersing MAPbBr3 SC in an isopropanol (IPA) solution of CH3NH3Br (MABr). Compared to the untreated SC, the photoluminescence intensity of the homologous MABr treated SC is greatly enhanced by passivation treatment, and the photogenerated carrier lifetime increases from 16 ns to 148 ns. The space charge limited current (SCLC) results show that the trap state density is substantially reduced from 2.34 x 109 cm-3 to 7.22 x 108 cm-3. The X-ray photoelectron spectrum (XPS) of the Pb element presents a significantly reduced peak of metalized Pb, confirming that the metalized Pb ion defects at the surface are effectively passivated. The asymmetry in current-voltage (I -V) curves arising from ion migration is substantially compressed. Furthermore, the photocurrent is significantly enhanced, and the responsivity and detectivity are similar to 7 times higher in the MABr treated SC device. The results suggest a novel, feasible and efficient strategy to passivate surface defects for perovskite single crystals with improved properties.(c) 2022 Elsevier B.V. All rights reserved.

A NEW METHOD:CH 3 CSNH 2 /NH 4 OH PASSIVATED GaAs (100) SURFACE BY SRPES INVESTIGATION

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

SRPES AND PL FURTHER STUDIES OF CHEMICAL-PASSIVATED GaAs SURFACE BY-CH3CSNH2 TREATMENT

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Investigation of Neutralized (nh4)(2)s Solution Passivation of Gaas (100) Surfaces

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

New surface passivation technique of GaAs by S2Cl2 treatment

Synchrotron radiation photoemission study of S2Cl2-treated GaAs(100) surfaces

Electrochemical Sulfur Passivation of GaAs

Homologous Bromides Passivation of CH 3NH 3pbbr 3 Single Crystals for Photodetectors with Improved Properties

Study of HREELS and XPS on sulfide passivated GaAs (100) surface

Sulfurized Passivation of GaAs(100) Surfaces

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

Newly Developed Passivation of GaAs Surfaces and Devices

Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Chemical Bonding and Electronic Properties of SeS2-treated GaAs(100)

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate