Abstract:Gallium arsenide (GaAs) is an important compound semiconductor for optoelectronic devices. However, the fast nonradiative recombination velocity of GaAs requires surface passivation for the nano-optoelectronic and nanophotonic applications. Despite strides have been made in GaAs surface passivation, chemical treatments like sulfidation and nitridation suffer from reproducibility and stability issues, thus requiring protective layer encapsulation. Traditional vacuum based film passivation exposes samples to high temperature plasma, causing surface damage, and is expensive. Here, we demonstrate an effective passivation method via sol-gel growth of SiO2 shell on both dry etched GaAs nanopillar and bottom-up grown GaAs nanowires at room temperature with uniform coating and controlled thickness from sub-10 nm to around 100 nm, showing advantages in low cost as well as suitability for different types of nano morphology. X-ray photoelectron spectroscopy analysis confirms that the SiO2 sol-gel method with the addition of (NH4)2S can significantly remove the native oxides on the surface. Under the optimized SiO2 coating procedure, the emission intensity of dry etched GaAs nanopillar with a diameter of 0.5 μm is enhanced about 29.6 times and the decay lifetime of the minority carriers with a diameter of 1.8 μm increased from 43.6 to 477.5 ps. Thus, the easy fabrication, broad suitability, as well as effective passivation effect turn sol-gel growth of SiO2 into a cost-effective surface passivation approach for III–V nanostructures.

Newly Developed Passivation of GaAs Surfaces and Devices

Progress In Sulfur Passivation Of Gaas Surfaces

Newly developed passivation technique of GaAs surfaces

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Sulfurized Passivation of GaAs(100) Surfaces

Passivation of Gaas Surface by Sulfur Glow Discharge

Electrochemical Sulfur Passivation of GaAs

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

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X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

Enhanced surface passivation of GaAs nanostructures via an optimized SiO2 sol-gel shell growth

Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Passivation of the GaAs(100) surface with a vapor-deposited GaS film

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices