Abstract:The surface optical and chemical properties of gallium antimonide (GaSb) surfaces after dichloride disulfide (S2Cl2) and ammonium sulfide ((NH4)2S) treatments were compared. Photoluminescence (PL) spectroscopy is used to study the GaSb surfaces passivated by S2Cl2 comparing to (NH4)2S solution, meanwhile, quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that S2Cl2 passivation dramatically improves the stability against reoxidation in air compared with the (NH4)2S solution. We found that S2Cl2 method is quite effective for removing oxides of GaSb surface, besides, PL intensity of S2Cl2-passivated sample was higher than (NH4)2S-passivated sample, and stability of S2Cl2-passivated sample was also more sustained. Overall, S2Cl2 provides to be superior passivation for III-V compound semiconductor material promising for high-speed and optoelectronic device applications.

New surface passivation technique of GaAs by S2Cl2 treatment

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Synchrotron radiation photoemission study of S2Cl2-treated GaAs(100) surfaces

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Newly developed passivation technique of GaAs surfaces

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

Study on the properties of gallium antimonide surface passivatied with S2Cl2 solution

The surface and photoluminescence properties of GaAs passivated by wet chemical method

Progress In Sulfur Passivation Of Gaas Surfaces

Electrochemical Sulfur Passivation of GaAs

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

The Improvement of Gallium Antimonide Surface by Sulphur Passivation

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

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