Abstract:Sulfur passivation and subsequent wafer-bonding treatments are demonstrated for III–V semiconductor applications using GaAs–GaAs direct wafer-bonded structures. Two different sulfur passivation processes are addressed. A dry sulfur passivation method that utilizes elemental sulfur vapor activated by ultraviolet light in vacuum is compared with aqueous sulfide and native-oxide-etch treatments. The electrical conductivity across a sulfur-treated 400 - °C-bonded n-GaAs/n-GaAs interface significantly increased with a short anneal (1–2 min) at elevated temperatures (500–600 °C). Interfaces treated with the NH4OH oxide etch, on the other hand, exhibited only mild improvement in accordance with previously published studies in this area. TEM and STEM images revealed similar interfacial microstructure changes with annealing for both sulfur-treated and NH4OH interfaces, whereby some areas have direct semiconductor–semiconductor contact without any interfacial layer. Fitting the observed temperature dependence of ze...

S2Cl2 passivation of GaAs/AlGaAs HBT

Passivation Of Gaas/Algaas Heterojunction Bipolar Transistors By S2cl2 Solution

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

Passivation of GaAs Field-Effect Transistors in Diluted S2Cl2 Solution

New surface passivation technique of GaAs by S2Cl2 treatment

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

Synchrotron radiation photoemission study of S2Cl2-treated GaAs(100) surfaces

Newly Developed Passivation of GaAs Surfaces and Devices

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices

Determination of etching rate of GaAs in S2Cl2 solution

Synchrotron radiation photoemission study of S-passivated GaAs surfaces

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Electrochemical Sulfur Passivation of GaAs

Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

Dry Passivation Process for Silicon Heterojunction Solar Cells Using Hydrogen Plasma Treatment Followed by In Situ a-Si:H Deposition

Progress In Sulfur Passivation Of Gaas Surfaces

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation

Passivation of the GaAs(100) surface with a vapor-deposited GaS film