Abstract:The Ga-face gallium nitride (GaN) crystal has recently attracted significant research interest in the micro/nano device due to its exceptional properties. Therefore, exploring low-cost and high-efficiency anisotropic wet etching processes for GaN material is essential. This research investigates the measurement of the overall anisotropic etching rates by introducing a novel micrometer-level hemispherical structure. For the first time, we report the full anisotropic etching rate distribution for Ga-face GaN crystal planes based on the etched results of the micro hemisphere and wagon-wheel structure specimen. The etching experiments were carried out in 85 %wt H₃PO₄ etchant at 130°C and 150°C. The etching result of Ga-face GaN crystal orientations displays a hexagonal symmetry pattern. In addition, the overall etch rates measurement enables the identification of the crystal planes with maximum and minimum etch rates at different temperatures, and the experiment also shows the etch rate of primary crystallographic orientations, such as +c-plane, m-plane, and a-plane. Finally, the atomic structures of GaN crystallographic planes are analyzed to explain the anisotropy in the etching process on different crystal zones by the step-flow mechanism. The resulting etch rate database allows the numerical simulation of the etch front and helps understand the etching mechanism of the GaN crystal.

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