Abstract:We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using Cl-2/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between Cl-2 and CH4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters, vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855 nm/min, and the selectivity ratio over SiO2 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.

Characteristics of GaN Thin Films by Inductively Coupled Plasma Etching with Cl2/BCl3 and Cl2/Ar

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

Nonselective Etching of GaN/AlGaN Heterostructures by Cl2/Ar/BCl3 Inductively Coupled Plasmas

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Effect of ICP etching of p-GaN layer on the optical and electrical characteristics of GaN-based LEDs

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

Nanoscale Ge Fin Etching Using Inductively Coupled Plasma For Ge-Based Multi-Gate Devices

Study on ICP dry etching of type II InAs/GaSb superlattices infrared focal plane arrays

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

Characteristics of N-Gan after ICP Etching

Characteristics and Mechanism of Al1.3Sb3Te Etched by Cl2/BCl3 Inductively Coupled Plasmas

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Control of Inductively Coupled Plasma Etching GaN Sidewall Profiles and Etch Rate