Abstract:Atmospheric-pressure (AP) plasma sources have attracted researchers in many engineering fields, due to its low cost and easy handling. The AP plasma technique has been successfully applied on the surface figuring and texturing of Si, fused silica, RS-SiC, and SiC, etc. However, these studies focus more on better control for surface figuring of the substrate. The understanding of how the Si surface roughening or smoothing is occurred during the AP plasma etching using He-based CF4 mixture gas has seldom been reported. The present study starts from a parametric study of O2 addition concentration to He-based CF4 plasma. A groove is initially etched on a single-crystal silicon wafer by the CCP-type parallel-plate plasma etcher, to study the etching rate, surface morphology, material removal characteristics, and surface roughness evolution after the plasma etched removal. It is revealed that the material removal with a typical profile is achieved without introducing further damage. At the same time, the surface finish and surface integrity were enhanced by the AP plasma. The underlying mechanism of the process was investigated. Additionally, the optimized gas composition is then applied to the larger area etching by the computer-controlled scanning with different feed rates. Based on the experimental results, the surface evolution during the plasma etching process is revealed in detail. The surface removal profile also demonstrates that this method can provide an alternative way to achieve damage-free material removal for a larger area substrate by the duplicating of the typical removal profile with different etching path.

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

The effect of inductively-coupled-plasma reactive ion etching power on the etching rate and the surface roughness of a sapphire substrate

Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

NOVEL ETCHING TECHNOLOGY OF INP BY INDUCTIVELY COUPLED PLASMA1

Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3

Room temperature inductively coupled plasma etching of InP-based semiconductors using Cl2/N2 and Cl2/N 2/Ar mixtures

Inductively coupled plasma-reactive ion etching of InSb using CH[sub 4]∕H[sub 2]∕Ar plasma

Inductively Coupled Plasma-Reactive Ion Etching Of Insb Using Ch4/H-2/Ar Plasma

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer