Abstract:Anisotropic pattern transfer with low damage in compound semiconductor dry etching requires an in depth understanding of the chemical processes that occur at the plasma/semiconductor interface that promote the removal of volatile product species. In situ mass spectrometry has been used to study product evolution during high density plasma etching of GaAs in a Cl2/Ar chemistry. Through definitive surface temperature control and configuration of the mass spectrometer to sample through the substrate platen, a comprehensive picture of the etch process was obtained. Evolution of etch products of GaAs (AsClx and GaClx) was monitored as neutral flux (pressure), ion flux (microwave power) and ion energy (substrate bias) are varied to identify conditions where ion-driven surface chemistry is dominant. Observations show that fluxes of atomic chlorine neutrals and ions are required at the substrate to maximize etch product formation. These conditions are optimally met at low microwave powers (⩽300 W) and pressures (⩽1.0 mTorr) in our system. The ion energy dependence of product formation shows regions of thermal/chemical etching for energies less than 50 eV, ion-assisted chemical etching for energies between 50 and 200 eV, and sputtering for energies greater than 200 eV. Ideal processing conditions are ascertained from the trade off between maximum ion-assisted etch rate and minimal electronic damage, as measured by photoreflectance spectrometry. The effectiveness of post-etch chlorine treatments on returning of the surface Fermi level to its pre-etched value was also investigated.

Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3

Nonselective etching of GaN/AlGaN heterostructures by Cl 2 /Ar/BCl 3 inductively coupled plasmas

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Nonselective and smooth etching of GaN/AlGaN heterostructures by inductively coupled plasmas

Dry Etching Characteristics of Algan/Gan Heterostructures Using Inductively Coupled H-2/Cl-2, Ar/Cl-2 and Bcl3/Cl-2 Plasmas

Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled Cl2/N2/O2 Plasmas

ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides

Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN

Smooth Etching of Epitaxially Grown AlN Film by Cl2/BCl3/Ar-based Inductively Coupled Plasma

Characteristics of Gan Thin Films by Inductively Coupled Plasma Etching with Cl-2/Bcl3 and Cl-2/Ar

Dry Etching Characteristics of TiN Thin Films in BCl 3 /He Inductively Coupled Plasma

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4 Plasma

Characteristics of N-Gan after Cl-2/Ar and Cl-2/N-2 Inductively Coupled Plasma Etching

The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma

Surface chemistry and damage in the high density plasma etching of gallium arsenide

Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Evaluation of Etching Performance of Single Etching Gases for High-Κ Films