Abstract:Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2, has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of rf power, pressure, and O2 concentration on etch rate in CF4+O2, SF6+He, and Ar gases has been investigated. RIE mechanisms were studied using in situ monitoring of excited fluorine emission intensity and dc self-bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220, 600, and 375 Å/min in CF4+4% O2; 8850, 500, and 560 Å/min in SF6+50% He; and 340, 280, and 270 Å/min in Ar, respectively, at P=200 W, p=20 mTorr, and 300 K. Under these conditions the dc self-bias levels are −396 V for CF4+4% O2, −350 V for SF6+50% He, and −414 V for Ar. In both CF4+4% O2 and SF6+50% He, the etch rates of Si, SiO2, and SiC all increase monotonically with the rf power. However, with increasing pressure the Si etch rate increases while the etch rates of SiO2 and SiC decrease. Since the dc self-bias varies proportionally with power and inversely with pressure, it is clear that the etching of Si is chemical reaction rate controlled. On the other hand, the etch rate of SiC depends on the ion bombardment energy and is thus dominantly controlled by a physical reaction. The SiC etch rate exhibits a weak dependence on O2 concentration in CF4+O2 mixtures. The dc self-bias is not affected by increasing O2 concentration, but the SiC etch rate is slightly enhanced. This suggests that a certain etching inhibitor layer exists on the surface of SiC, which can weakly react with the O2 plasma. Auger electron spectroscopy data indicates that this layer consists of carbon atoms.

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Reactive ion etching of SiC thin films using fluorinated gases

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Study on the Reactive Ion Etching of Si_3N_4

Reactive Ion Etching of HfO2 Films

Synchrotron-Radiation-Induced Deposition of Etch-Protecting Film on Si in Cf4 Plasma

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Reactive Ion Beam Etching of Hfo2 Film Using Ar/Chf3 Gas Chemistries

Role of physisorption in atomic layer etching of silicon nitride

Influence of PECVD process on the etching rate of SiNx films

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma.

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma