Abstract:Introduction Ge is one of the most promising channel materials to further improve the performance of Si CMOS due to its high hole and electron mobility [1-3]. In order to overcome the current Si FinFET technology, 3D channel structure is mandatory for Ge MOSFETs. To fabricate Ge Fins, CF4- or SF6-based RIE etching is usually employed for Ge etching [Ref. needed]. However, both CF4 and SF6 RIE etching results in large surface roughness which strongly degrades the performance of Ge FinFETs. On the other hand, it is necessary to realize high selectivity of anisotropic etching of Ge which is important to obtain superior static electrical control of Fin channel. In this research, we developed a SF6-CF4 cyclic RIE etching method for Ge Fin formation with suppressed surface roughness. The impact of inserting SF6-O2 etching steps into CF4-O2 etching process on the surface roughness of Ge was systematically investigated, as well as the ratio of vertical etching to horizontal etching of Ge. It is found that with a time proportion of 60% for SF6-O2etching steps, a minimum RMS of 1.1 nm is obtained for Ge Fin etching. Experiments The CF4-O2 and SF6-O2 RIE cyclic etching were carried out for (100) Ge surfaces with the same pressure, plasma power and total gas flow. Different time proportions of 0%, 20%, 40%, 60%, 80% and 100%, were used for SF6-O2 etching steps during the CF4-O2etching, with a total etching time of each cycle for 20 s. The selectivity of vertical and horizontal etching of Ge was examined using SEM, and the surface roughness of Ge after etching was evaluated using AFM. Results and discussion Figure 1 shows the etching rate of CF4-O2 and SF6-O2 cyclic etching with different time proportion of SF6-O2 step. It is observed that the etching rate significantly increases with increase of SF6-O2 etching proportion, due to the high reactivity of SF6 with Ge [4]. The RMS of Ge surfaces after CF4-O2 and SF6-O2 cyclic etching for 20 s is evaluated by AFM (Figure 2). It is confirmed that large amount of surface roughness is generated for Ge surface after both CF4-O2 and SF6-O2 etching. With introducing SF6-O2 etching steps into CF4-O2 etching, the surface roughness of Ge is obviously reduced. The RMS values of Ge surface after CF4-O2 and SF6-O2 cyclic etching are summarized in Figure 3 as a function of the time proportion of SF6-O2 etching. It is found that with a time proportion of 60% for the SF6-O2 step, a minimum RMS of 1.1 nm is obtained for the Ge surface. The impact of SF6-O2 proportion to the ratio of vertical and horizontal etching for Ge is also examined, as shown in Figure 3. It is found that the selectivity of vertical etching decreases with increasing the SF6-O2 proportion. However, a relatively high selectivity of vertical etching of over 4 is still maintained with a time proportion of 60% for SF6-O2etching, resulting in Ge Fins with superior morphology (Figure 4). Conclusion A CF4-O2 and SF6-O2 cyclic etching method is proposed for Ge Fin formation. It is found that with a time proportion of 60% for SF6-O2etching step, superior morphology is achieved for Ge Fins with sufficiently suppressed surface roughness of 1.1 nm. References [1] S. Takagi, et al. IEDM, 2003. [2] H. Shang, et al. IBM. J. Res. Dev., 2006. [3] K. C. Saraswat, et al., Microelectro. Eng., 2008. [4] A. Campo, et al. J. Vac. Sci. Technol. B, 1995.

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Etching Silicon with Fluorine-Gas

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction

Reactive ion etching of SiC thin films using fluorinated gases

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Study on Mechanism of Al-enhanced Etching of Silicon by Reactive Ions in SF_6/O_2 Environment

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

The Role of Sulfite in the Wetting Etching of Silicon and Silica

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

Reduction of RIE Induced Ge Surface Roughness by SF6-CF4 Cyclic Etching Method