Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

Sanghyun You,Eunjae Sun,Heeyeop Chae,Chang-Koo Kim
DOI: https://doi.org/10.3390/ma17163917
2024-08-07
Abstract:This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.
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