Abstract:Reactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2, has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of rf power, pressure, and O2 concentration on etch rate in CF4+O2, SF6+He, and Ar gases has been investigated. RIE mechanisms were studied using in situ monitoring of excited fluorine emission intensity and dc self-bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220, 600, and 375 Å/min in CF4+4% O2; 8850, 500, and 560 Å/min in SF6+50% He; and 340, 280, and 270 Å/min in Ar, respectively, at P=200 W, p=20 mTorr, and 300 K. Under these conditions the dc self-bias levels are −396 V for CF4+4% O2, −350 V for SF6+50% He, and −414 V for Ar. In both CF4+4% O2 and SF6+50% He, the etch rates of Si, SiO2, and SiC all increase monotonically with the rf power. However, with increasing pressure the Si etch rate increases while the etch rates of SiO2 and SiC decrease. Since the dc self-bias varies proportionally with power and inversely with pressure, it is clear that the etching of Si is chemical reaction rate controlled. On the other hand, the etch rate of SiC depends on the ion bombardment energy and is thus dominantly controlled by a physical reaction. The SiC etch rate exhibits a weak dependence on O2 concentration in CF4+O2 mixtures. The dc self-bias is not affected by increasing O2 concentration, but the SiC etch rate is slightly enhanced. This suggests that a certain etching inhibitor layer exists on the surface of SiC, which can weakly react with the O2 plasma. Auger electron spectroscopy data indicates that this layer consists of carbon atoms.

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Reactive ion etching of SiC thin films using fluorinated gases

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Evaluation of Etching Performance of Single Etching Gases for High-Κ Films

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

A study on the etching characteristics of atmospheric pressure plasma for single-crystal silicon wafer

High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6

Ion-Enhanced Etching Characteristics of sp2-Rich Hydrogenated Amorphous Carbons in CF4 Plasmas and O2 Plasmas

Electron dynamics and SiO2 etching profile evolution in capacitive Ar/CHF3 discharges driven by sawtooth-tailored voltage waveforms

Heptafluoroisopropyl Methyl Ether as a Low Global Warming Potential Alternative for Plasma Etching of SiC

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching