Abstract:Radio frequency capacitively coupled plasmas (RF CCPs) sustained in fluorocarbon gases or their mixtures with argon are widely used in plasma-enhanced etching. In this work, we conduct studies on instabilities in a capacitive CF4/Ar (1:9) plasma driven at 13.56 MHz at a pressure of 150 mTorr, by using a one-dimensional fluid/Monte-Carlo (MC) hybrid model. Fluctuations are observed in densities and fluxes of charged particles, electric field, as well as electron impact reaction rates, especially in the bulk. As the gap distance between the electrodes increases from 2.8 cm to 3.8 cm, the fluctuation amplitudes become smaller gradually and the instability period gets longer, as the driving power density ranges from 250 to 300 W m−2. The instabilities are on a time scale of 16–20 RF periods, much shorter than those millisecond periodic instabilities observed experimentally owing to attachment/detachment in electronegative plasmas. At smaller electrode gap, a positive feedback to the instability generation is induced by the enhanced bulk electric field in the highly electronegative mode, by which the electron temperature keeps strongly oscillating. Electrons at high energy are mostly consumed by ionization rather than attachment process, making the electron density increase and overshoot to a much higher value. And then, the discharge becomes weakly electronegative and the bulk electric field becomes weak gradually, resulting in the continuous decrease of the electron density as the electron temperature keeps at a much lower mean value. Until the electron density attains its minimum value again, the instability cycle is formed. The ionization of Ar metastables and dissociative attachment of CF4 are noticed to play minor roles compared with the Ar ionization and excitation at this stage in this mixture discharge. The variations of electron outflow from and negative ion inflow to the discharge center need to be taken into account in the electron density fluctuations, apart from the corresponding electron impact reaction rates. We also notice more than 20% change of the Ar+ ion flux to the powered electrode and about 16% difference in the etching rate due to the instabilities in the case of 2.8 cm gap distance, which is worthy of more attention for improvement of etching technology.

Electron dynamics and SiO2 etching profile evolution in capacitive Ar/CHF3 discharges driven by sawtooth-tailored voltage waveforms

Electron dynamics and particle transport in capacitively coupled Ar/O2 discharges driven by sawtooth up voltage waveforms

Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms

Gap Length Effect on Discharge Mode and Etching Profiles in Asymmetric Dual Frequency Capacitive CF4/Ar Discharges

Hybrid Simulation of Instabilities in Capacitively Coupled RF CF4/Ar Plasmas

Electron Power Absorption Mode Transition in Capacitively Coupled Ar/CF4 Discharges: Hybrid Modeling Investigation

Feature Profile Evolution During Etching of Sio2 in Radio-Frequency or Direct-Current Plasmas

Gas Ratio Effects on the Si Etch Rate and Profile Uniformity in an Inductively Coupled Ar/Cf4 Plasma

Modeling and Experimental Investigation of the Plasma Uniformity in Cf4/O-2 Capacitively Coupled Plasmas, Operating in Single Frequency and Dual Frequency Regime

Study On Atomic Layer Etching Of Si In Inductively Coupled Ar/Cl-2 Plasmas Driven By Tailored Bias Waveforms

Study on Feature Profile Evolution for Chlorine Etching of Silicon in an RF Biased Sheath

Effects of low-frequency voltage on nonlinear standing wave excitation, plasma uniformity, and ion dynamics in dual-frequency asymmetric capacitive discharges

A Multi-Scale Study on Silicon-Oxide Etching Processes in C 4 F 8 /ar Plasmas

Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles

Hybrid simulation of instabilities in capacitively coupled RF CF 4 /Ar plasmas driven by a dual frequency source

The effects of electron surface interactions in geometrically symmetric capacitive RF plasmas in the presence of different electrode surface materials

Hybrid Simulation of Electron Energy Distributions and Plasma Characteristics in Pulsed RF CCP Sustained in Ar and SiH4/Ar Discharges

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Temporal Evolution of a Capacitively Coupled Argon Discharge Due to the Sputtering of an Oxide Layer on an Aluminum Electrode

Role of gas composition in weakened nonlinear standing wave excitation and improved plasma radial uniformity in very-high-frequency asymmetric capacitive Ar/CF4 discharges