Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Study on Mechanism of Al-enhanced Etching of Silicon by Reactive Ions in SF_6/O_2 Environment

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

The Role of Sulfite in the Wetting Etching of Silicon and Silica

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Molecular Dynamics Study of Interaction between Fluorine Atoms and Silicon Surface

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study

Etching Silicon with Fluorine-Gas

Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation

Direct Measurement of the Etching Rates on Si(111) and Silicon Dioxide Surfaces in 40% Ammonium Fluoride Aqueous Solution Via Atomic Force Microscopy

Enhancing Si3N4 Selectivity over SiO2 in Low-RF Power NF3–O2 Reactive Ion Etching: The Effect of NO Surface Reaction

Molecular dynamics simulation of silicon oxidation enhanced by energetic hydrogen ion irradiation

Reactive ion etching of SiC thin films using fluorinated gases

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

Metal Ions' Dynamic Effect on Metal-Assisted Catalyzed Etching of Silicon in Acid Solution

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation