Abstract:The aim of the present paper is to review our work on plasma‐surface interactions during the etching of silicon gates in low pressure high density HBr/Cl2/O2 based plasmas. In integrated circuit manufacturing, the transfer of patterns onto the polysilicon layer relies on the formation of a passivation layer on sidewalls of the etched features, which protects the silicon gate sidewall fromisotropic etching. At the same time, a layer with an almost identical chemical composition is also deposited on the reactor walls and can modify the process parameters by changing the radicals' surface loss probability. In this work we use a new “plasma etching‐sputtering” diagnostic technique, involving a subsequent “mild etching” of the layer deposited on the chamber walls by a few % SF6‐containing Ar plasma. Thus we investigate the chemical composition of this layer. This chemical composition is deduced from the time variation of the gas phase concentration of different atoms and radicals, the etch products of the wall deposited layer, monitored during the “mild etching” of the layer by time‐resolved optical emission spectroscopy and mass spectrometry. Optical absorption spectroscopy and mass spectrometry have been employed to characterize the HBr/Cl2/O2 plasma, currently used for the gate etching, and to estimate the absolute flux of neutral and ionic deposition precursors reaching the reactor walls. It comes out that the silicon wafer etch byproducts, SiClx radicals (x < 2) and SiOyCl+x ions, are the main depositing agents. Finally, the chemical topography analysis method, based on the X‐ray photoelectron spectroscopy, has been used to determine the chemical composition of the layer formed on the sidewalls of the silicon etched features. We show that the layers deposited on the sidewalls and on the chamber walls are both silicon oxyhalogenides (SiOyClx) compounds, formed by the subsequent oxidation of the deposited silicon chloride etching by‐products. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas

Numerical investigation of the effect of variation of gas mixture ratio on density distribution of etchant species (Br, Br+, Cl, Cl+, and H) in HBr/Cl2/Ar plasma discharge

Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching

Spatially averaged global model of HBr/Cl2 inductively coupled plasma discharges

Parametric modeling and measurement of silicon etching in a high density chlorine plasma

Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas

Correlation and Interaction between Sidewall Passivation and Chamber Walls Deposition During Silicon Gate Etching

Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Molecular beam studies of a gas-surface reaction: dynamics of laser-induced chemical etching of silicon (111) by chlorine

In situ measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor

Molecular dynamics simulation of Si trench etching with SiO2 hard masks

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Atomistic description of Si etching with HCl

In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source

Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects