Abstract:A proposed mechanism called "pseudo‐wet plasma etching" explains cryogenic etching process with hydrogen‐containing fluorocarbon plasmas. At cryogenic temperatures, the synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed HF/H2O, and the material being etched, unlike conventional reactive ion etching conducted at high temperatures. Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub‐nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface‐adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in the ER of SiO2 using CF4/H2 plasmas. The ER increases twofold when plasma with H2/(CF4 + H2) = 33% is used and the substrate temperature is lowered from 20 to −60 °C. The adsorption of HF and H2O on the SiO2 surface at cryogenic temperatures is confirmed using in situ Fourier transform infrared spectroscopy. The synergistic interactions of the surface‐adsorbed HF/H2O as etching catalysts and plasma species result in the ER enhancement. Therefore, a mechanism called "pseudo‐wet plasma etching" is proposed to explain the cryogenic etching process. This synergy demonstrates that the enhanced etch process is determined by the surface interactions between ions, surface‐adsorbed chemistry, and the material being etched, rather than interactions between ion and gas phase, as observed in the conventional RIE.

In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source

Isotropic Etch for SiO2 Microcantilever Release with ICP System

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Parametric modeling and measurement of silicon etching in a high density chlorine plasma

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Vertical and Smooth, Etching of Inp by Cl-2/Ch4/Ar Inductively Coupled Plasma at Room Temperature

Molecular-Beam Study of Laser-Induced Chemical Etching of Si(111) by Chlorine Molecules

Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

Etching of high aspect ratio features in Si using SF6∕O2∕HBr and SF6∕O2∕Cl2 plasma

REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

In situ measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor

Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma

ON MECHANISMS OF OXYGEN INFLUENCE ON GAS-PHASE PARAMETERS AND SILICON REACTIVE-ION ETCHING KINETICS IN HBr + Cl2 + O2 PLASMA

Selective Dry Etching of GaAs/AlAs Based on SiCl4/SF6 Mixtures by ICP

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects

Quasi‐atomic layer etching of silicon with surface chlorination and removal using Ar or He plasmas

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions