Abstract:Reactive ion beam etching of silicon is performed at low substrate temperature (153<T<300 K). The beam is extracted from a SF6 microwave plasma. The energy of the beam is 100 eV<E<400 eV, the ion current density is 0<J<5 mA cm−2. Energy distribution and composition of the beam have been studied using a mass spectrometer coupled with a cylindric mirror analyzer. The beam can be considered as monoenergetic with a full width at half-maximum about 8 eV. Using SF6 plasma, F+ is the predominant species, a significant proportion of SF+, SF2+, S+, and SF3+ ions is present in the beam. The active neutral flux of fluorine atoms coming from the ion source has been estimated between 6×1016 and 4×1017 cm−2 s−1. When no ion beam strikes the sample, the probability of reaction of neutral F atoms with Si is evaluated between 0.02 and 0.1 at 300 K. The decrease of the substrate temperature has revealed the role of the ion-induced reaction and the ion-stimulated desorption of SFx radicals in the etching process. At relative low power densities (100<E<400 eV and J=0.65 mA cm−2), an increase in the etch yield occurs as the temperature decreases until 220 K because there is an enhancement of the ion-induced reactions. If the energy of the beam is not high enough, the etching is reduced or even blocked by a thick layer of adsorbed molecules at T<220 K. At higher power densities (100<E<400 eV and 2 mA cm−2<J<5 mA cm−2) no significant etch yield enhancement is noted as the temperature decreases because the ion-stimulated desorption becomes predominant. In the case of high current density which corresponds to low values of the ratio of neutral flux over ion flux (a few ten), the etch yield approaches the value of the physical sputtering yield calculated by a model derived from the Sigmund cascade collision.

Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source

Effects of bias frequency on reactive ion etching lag in an electron cyclotron resonance plasma etching system

Study on the Distribution Control of Etching Rate and Critical Dimensions in Microwave Electron Cyclotron Resonance Plasmas for the Next Generation 450 mm Wafer Processing

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Parametric modeling and measurement of silicon etching in a high density chlorine plasma

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Silicon Wafer Etching by Transmitted Electron‐Beam‐Enhanced Plasma

In situ measurements of HCl during plasma etching of poly-silicon using a diode laser absorption sensor

Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors

Reactive ion etching of SiC thin films using fluorinated gases

Effects of plasma conditions on the shapes of features etched in Cl2 and HBr plasmas. I. Bulk crystalline silicon etching