Abstract:Plasma etching with high selectivity and anisotropy for 20 nm poly-Si gate patterning on EOT of 1.4 nm gate oxynitride is developed in a Cl2/HBr/O2 gas mixture successfully. Direct write e-beam lithography is used for an SAL601 chemically amplified negative resist pattern. Using a combination of resist ashing and TEOS hard mask trimming process, sub-25 nm TEOS SiO2 mask patterns are obtained in the control. Various gas mixtures based on Cl2, HBr, and O2 have been used to study the etching characteristics of poly-Si on EOT of 1.4 nm gate oxynitride. The O2 content as well as HBr are very sensitive to etch rate, selectivity, and the protection of the sidewalls of polysilicon, owing to SiO2-like film, SiOxBry, formed on the etched surface confirmed by x-ray photoelectron spectroscopy. And the ratio of Cl2/HBr/O2 in gas mixture is also tightly related to the etching profile. Using a four-step etching process under optimum conditions the selectivity of poly-Si to oxide is much higher than 500:1, in fact, after polysilicon etching the net deposition of oxide is observed, and no damage on the active area beside the gates for EOT of 1.4 nm gate oxide is observed, too. The etching profile of the 20 nm poly-Si gate pattern is perfectly vertical and an overall narrowing by an estimated 5 nm is observed for oxide masked poly-Si gate etching. The possible mechanism is discussed. This etching process combined with resist ashing and the TEOS hard mask trimming process are implemented successfully to the fabrication of high performance 36 nm gate length complementary metal–oxide–semiconductor (CMOS) devices and 42 nm gate length 32 frequency dividers with 57 stage/201 stage CMOS ring oscillators embedded, the EOT of gate oxynitrid is 1.4 nm, and very good results are obtained.

Pulse‐time‐modulated electron cyclotron resonance plasma etching for highly selective, highly anisotropic, and notch‐free polycrystalline silicon patterning

Pulse‐time‐modulated electron cyclotron resonance plasma etching with low radio‐frequency substrate bias

Isotropic Etch for SiO2 Microcantilever Release with ICP System

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Plasma Cyro-etching of High Aspect Ratio Silicon Crystal Structures

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

20 Nm Polysilicon Gate Patterning and Application in 36 Nm Complementary Metal–oxide–semiconductor Devices

Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching

An Etchant for Delineation of Flow Pattern Defects in Heavily Doped N-Type Silicon Wafers

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Pulsed Anodic Etching: an Effective Method of Preparing Light-Emitting Porous Silicon

Systematic Study on Pulse Parameters in Fabricating Porous Silicon-Layered Structures by Pulse Electrochemical Etching

Silicon Wafer Etching by Transmitted Electron‐Beam‐Enhanced Plasma

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Recouping etch rates in pulsed inductively coupled plasmas

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

Rapid anisotropic chemical etching for quick formation of novel octagonal pyramids on silicon surface for photovoltaics

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Ion Bombardment As Dominant Factor in Plasma Cryo-Etching for High Aspect Ratio Silicon Structures