Abstract:Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a> and 0.02 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>) in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times (5 to 25 min). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. We have studied the morphological and structural properties of PSi layers using the techniques of Xray Diffraction (XRD) and Scanning Electron Microscopy (SEM) and Gravimetric method. The Xray Diffraction data shows that the structure aspect of PSi layers remains crystalline as well as the decreasing of diffraction angle (thetaB) of Xray from PSi layers (29 to 26 degree) and increasing of the lattice parameter values of PSi structures with increasing of etching times from 5 to 25 min., and the resistivity of silicon substrates from 0.02 to 3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>. The nanocrystallite size is decreasing from (20.72 to 5.13 nm) with increasing of etching times, and the resistivity of silicon substrates. The SEM images shows that the values of pore width and PSi layer thickness increases from (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively with increasing of etching times and silicon substrates resistivities, while the values of the thickness of walls between pores has been varied from (1.25 to 0.03 micrometer) with increasing of etching times and silicon substrates resistivities. The pore shape of pores has been varied from Cylindrical to Rectangular and to Starful with varied of etching conditions. Further the measured specific surface area of PSi layers has been increased from (7.43 to 235.35 m2/cm3) with increasing of etching times and silicon substrates resistivities.

Systematic Study on Pulse Parameters in Fabricating Porous Silicon-Layered Structures by Pulse Electrochemical Etching

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Flat Layered Structure and Improved Photoluminescence Emission from Porous Silicon Microcavities Formed by Pulsed Anodic Etching

The Effect of Different Wavelengths on Porous Silicon Formation Process

Preparation and Characterization of Freestanding Porous Silicon Films with High Porosities

The Influence of Microstructure on Optical Properties of Porous Silicon

Preparation of porous silicon by pulse etching method

Studies on microstructure and photoluminescence property of porous silicon

Al-assisted Anodic Etched Porous Silicon

A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching

Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Silicon Porosification: State of the Art

Pulsed Anodic Etching: an Effective Method of Preparing Light-Emitting Porous Silicon

Porous Si (111) Fabrication Using Electrochemical Anodization: Effects of Electrode Distance and Current Density

Study on the layering phenomenon of SiC porous layer fabricated by constant current electrochemical etching

Temperature: A Critical Parameter Affecting The Optical Properties Of Porous Silicon