Abstract:Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching. The full width at half maximum (FWHM) of the narrow PL peak available from a freshly etched PSM is about 9 nm. The emission concentrates in a cone of 10° around the normal of the sample, with a further reduced FWHM of ∼5.6 nm under angle-resolved measurements. Only the resonant peak is present in such angle-resolved PL spectra. No peak broadening is found upon exposure of the freshly prepared PSM to a He-Cd laser beam, and the peak becomes somewhat narrower (∼5.4 nm) after the PSM has been stored in an ambient environment for two weeks. At optimized etching parameters, even a 4-nm FWHM is achievable for the freshly etched PSM. In addition, scanning electron microscopy (SEM) plane-view images reveal that the single layer porous Si formed by pulsed current etching is more uniform and flatter than that formed by direct current (dc) etching, demonstrated by the well-distributed circular pores with small size in the former in comparison with the irregular interlinking pores in the latter. The SEM cross-section images show the existence of oriented Si columns of 10 nm diameter along the etching direction within the active layer, good reproducibility and flat interfaces. It is thus concluded that pulsed current etching is superior to dc etching in obtaining flat interfaces within the distributed Bragg reflectors because of its minor lateral etching.

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The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method

Al-assisted Anodic Etched Porous Silicon

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying

Studies on microstructure and photoluminescence property of porous silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Flat Layered Structure and Improved Photoluminescence Emission from Porous Silicon Microcavities Formed by Pulsed Anodic Etching

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Preparation of porous silicon by pulse etching method

Large-scale Fabrication, 3D Tomography, and Lithium-Ion Battery Application of Porous Silicon.

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

Novel simple and effective past-treatment technique of porous silicon

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Luminescence and photoconductivity properties of porous polycrystalline silicon

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

Hierarchical Nanostructuring of Porous Silicon with Electrochemical and Regenerative Electroless Etching

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon