Abstract:Porous silicon (PSi) layers has been prepared in this work via photoelectrochemical (PEC) etching process of an n type silicon wafers of two resistivities (3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a> and 0.02 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>) in hydrofluoric (HF) acid of 24.5 precent concentration at different etching times (5 to 25 min). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. We have studied the morphological and structural properties of PSi layers using the techniques of Xray Diffraction (XRD) and Scanning Electron Microscopy (SEM) and Gravimetric method. The Xray Diffraction data shows that the structure aspect of PSi layers remains crystalline as well as the decreasing of diffraction angle (thetaB) of Xray from PSi layers (29 to 26 degree) and increasing of the lattice parameter values of PSi structures with increasing of etching times from 5 to 25 min., and the resistivity of silicon substrates from 0.02 to 3.5 <a class="link-external link-http" href="http://ohm.cm" rel="external noopener nofollow">this http URL</a>. The nanocrystallite size is decreasing from (20.72 to 5.13 nm) with increasing of etching times, and the resistivity of silicon substrates. The SEM images shows that the values of pore width and PSi layer thickness increases from (0.5 to 6.25 micrometer) and (6.7 to 47 micrometer) respectively with increasing of etching times and silicon substrates resistivities, while the values of the thickness of walls between pores has been varied from (1.25 to 0.03 micrometer) with increasing of etching times and silicon substrates resistivities. The pore shape of pores has been varied from Cylindrical to Rectangular and to Starful with varied of etching conditions. Further the measured specific surface area of PSi layers has been increased from (7.43 to 235.35 m2/cm3) with increasing of etching times and silicon substrates resistivities.

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Al-assisted Anodic Etched Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Influence of Microstructure on Optical Properties of Porous Silicon

Preparation Of Porous Silicon By Electrochemical Etching Methods And Its Morphological And Optical Properties

Morphological and Electrical Features of Porous Silicon Prepared by Metal-Induced Chemical Etching

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

Effect of post-treatment processes on the photoluminescence of porous silicon

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities

Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching

Electrophoretic Assembly of Porous Silicon

Structural, Morphological and Electrical Properties of Porous Silicon Prepared Under Laser Illumination

Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Material synthesis: Microstructure and light emitting in porous silicon derived from hydrothermal etching

Photoluminescence of oxidized porous silicon under UV-light illumination

Studies on microstructure and photoluminescence property of porous silicon

Influence of the Surfaces Characteristics on the Luminescent Property of Porous Silicon

Microstructures and Emission Characteristics of Porous Silicon Films

Modification of Surface Morphology and Optoelectronic Response in Porous Si Films by Electrochemical Methods