Abstract:We have fabricated porous silicon layers (PSLs) in the anodizing solution, HF (48wt.%) : H 2 O = 1:1. After anodization, the PSL was etched in the same chemical solution as used for anodization and then illuminated with the 476.5 nm line, with a power of 20 mW, from an argon ion laser. A few minutes later we observed its photoluminescence (PL) spectrum under the same excitation power and then repeated the process of chemical etching followed by laser illumination, many times on the same specimen. For comparison, some spots on one PSL were etched for different times then to obtain a PL spectrum each spot was illuminated once by laser. The PL spectra of PSLs treated by the above two processes are very different. The PL band of the PSL treated by etching and illumination alternatively exhibited a continuous increase in intensity along with a blue shift for the first 5 repetitions. After reaching a maximum, the PL band exhibited a continuous reduction in intensity along with a red shift. Comparing the PL spectra for the different spots of the PSL treated for different etching times, the energy positions of their PL bands were almost the same. Only the intensity increased slightly with the time of etching. We think the blue and red shifts of the PL band for the PSL treated by etching combined with illumination are related to the quantum size effect of the PSL.

Effect of post-treatment processes on the photoluminescence of porous silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

Effect of annealing on photoluminescence of passivated porous silicon

A Blue Shift Followed by a Red Shift of the Photoluminescence Spectra for Porous Silicon Treated Alternatively by Chemical Etching and Laser Illumination

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Novel simple and effective past-treatment technique of porous silicon

Photoluminescence (PL) of porous silicon (PS) processed in H2O2 under illumination

Al-assisted Anodic Etched Porous Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

Effect of Laser Illumination on Oxidization of Porous Silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Effects of O, H and N passivation on photoluminescence from porous silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Two-peak Photoluminescence and Light-Emitting Mechanism of Porous Silicon

Annealing and amorphous silicon passivation of porous silicon with blue light emission

The Effect of Selenization and Post-Annealing on the Photoluminescence Property of Porous Silicon

Influence of Thermal Treatment on Photoluminescence of Porous Si