Photoluminescence (PL) of porous silicon (PS) processed in H2O2 under illumination

Jun Lin,Lizhu Zhang,Borui Zhang,Baiqing Q. Zong,Guogang Qin,Zhenhua Xu
1994-01-01
Abstract:The PL intensity increases at first, then, decreases with the increase of processing time and reaches its maximum value after one minute processing. Under the laser illumination in air, the PL degradation rate of PS processed in H2O2 is substantially less than the one of unprocessed PS. The experimental results from Fourier transform infrared (FTIR) absorption showed that the localized vibration related to oxygen increases greatly, in contrast, all kinds of Si-H bonds decrease obviously. Hence it was concluded that the luminescence does not come from the Si-H bonds on the surface of porous silicon.
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