Effect of annealing on photoluminescence of passivated porous silicon

Yue Zhao,Dongsheng Li,Wenbin Sang,Deren Yang

DOI: https://doi.org/10.1016/j.sse.2006.08.013

IF: 1.916

2006-01-01

Solid-State Electronics

Abstract:Photoluminescence (PL) of annealed porous silicon (PS) without and with nitrogen passivation has been investigated. The un-nitridated PS emits intense blue and green light, while that with passivation, emits only blue light and its intensity increases obviously. It is found that the PL intensity of the nitrified PS decreases with increasing temperature from 300°C to 700°C, but increases drastically after annealing at 800°C and 900°C, which might be due to the formation of Si–N bonds that passivates the non-radiative centers (Si dangling bonds) on the surface of PS samples. However, the intensity of the un-nitridated PS decreases continuously with increasing temperature from 300°C to 900°C, which might be due to desorption of hydrogen.