Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Photoluminescence Origins of the Porous Silicon Nanowire Arrays

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence and Photoluminescence Excitation Mechanisms for Porous Silicon and Silicon Oxynitride

Effect of annealing on photoluminescence of passivated porous silicon

The Defect Nature Of Photoluminescence From A Porous Silicon Nanowire Array

Two-peak Photoluminescence and Light-Emitting Mechanism of Porous Silicon

Photoluminescence Mechanism For Blue-Light-Emitting Porous Silicon

The synthesis and photoluminescence properties of selenium-treated porous silicon nanowire arrays.

Effect of post-treatment processes on the photoluminescence of porous silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Intense And Stable Blue-Violet Emission From Porous Silicon Modified With Alkyls

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

The Temperature Effect on the Photoluminescence of Porous Silicon Films Obtained from an N-Type Silicon Substrate

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

A Study of Porous Silicon Films

Photoluminescence Peak Energy Evolution For Porous Silicon During Photooxidation And Gamma-Ray Oxidation

In situ photoluminescence studies of photochemically grown porous silicon