Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

On the Red Photoluminescence Emission from Surface-Oxidised Silicon Nanocrystals

Origin of the 745 Nm Photoluminescence from Small Diameter Silicon Nanowires

Mechanisms of Visible Photoluminescence from Nanoscale Silicon Cones

Origin and Evolution of Photoluminescence from Si Nanocrystals Embedded in Asio2matrix

Near-IR photoluminescence from Si/Ge nanowire grown silicon wafers: effect of HF treatment

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Broadband Photoluminescence of Silicon Nanowires Excited by Near-Infrared Continuous Wave Lasers

Light emission from as-prepared and oxidized Si nanowires with diameters of 5–15 nm

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Light Emission from Si Nanoclusters Formed at Low Temperatures

Short-wavelength Photoluminescence from Silicon and Nitrogen Coimplanted SiO2 Films

Synthesis and photoluminescence properties of semiconductor nanowires

Photoluminescence Origins of the Porous Silicon Nanowire Arrays

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Near-infrared Light Emission from Si-rich Oxynitride Nanostructures

Optical properties and quantum confinement in ultrafine single crystal silicon nanowires synthesized by thermal evaporation without catalyst

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

White Light Emission and Optical Gains from a Si Nanocrystal Thin Film.

Room-temperature visible photoluminescence from nanocrystalline Si in Si/SiNx superlattices