Abstract:As the boundary condition was dropped down to the nanometer scale, the photo electronic properties can be changed dramatically especially that the photon luminescence (PL) properties may be changed significantly. Because two of the dimensions is comparable to or even smaller than the wavelengths of the PL, the nanowires are expected to show a variety of quantum confinement effects, such as density of state singularities, macro molecular behaviour over the long distances, high coherence of the emission, much high luminescence efficiency and low lasing threshold which is essential to construct novel integrated photo electronic devices in nanoscale. Besides, the high surface-tovolume ratio of these nanostructures also allows studying the role of surface states (and their ambient-driven changes) in determining the nanostructure carrier transport and optical excitation/recombination properties. The surface state and quantum confinement are two fundamental effects responsible to the photo electronic characteristic of nanostructures. Naturally the photoelectronic properties determine the future application for nanostructures including nanoparticles, nanowires, nanorods and so on. For example photo electronic properties determine whether the nanowires fabricated are suitable for such electronic application as field emission and photo-detection etc. Meanwhile many kinds of nanowires whose bulk materials can be used as photo luminescent sources are taken granted as the nanolaser active media. Such an idea needs lots of experiment to examine and confirm by the data of both the steady-state spectroscopy and time-resolved spectroscopy dynamically. Therefore we demonstrate a series studies on dynamic mechanism of nanowires (1 dimensional structure) and nanoparticles (0 dimensional structures) with respect to time, excitation density and photonic energy of PL. The sample focused are zinc oxide (ZnO)(Wang et al., 2009), carbon silicon (SiC)(Zhao et al., 2007), tungsten oxide (WO) covering both direct bandgap semiconductor and indirect bandgap semiconductors. The following will present the surface state effect on nanoparticles, ultrafast light emission from nanowires and directional lasing behaviour from nanotree. The mechanism of the ultrafast light emission will be discussed qualitatively.

Broadband Photoluminescence of Silicon Nanowires Excited by Near-Infrared Continuous Wave Lasers

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Hybrid Photon-Plasmon Nanowire Lasers

Laser-induced Greenish-Blue Photoluminescence of Mesoporous Silicon Nanowires

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.

Photoluminescence Enhancement in Wide Spectral Range Excitation in CsPbBr3 Nanocrystal/ag Nanostructure Via Surface Plasmon Coupling

Tunable, Broadband and High-Efficiency Si/Ge Hot Luminescence with Plasmonic Nanocavity Array

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Ultrafast Photoluminescence In Nanowires

Photoluminescence Principle and Research Progress of Silicon Nanowires

Enhanced Photoluminescence from Porous Silicon Nanowire Arrays

Origin of the 745 Nm Photoluminescence from Small Diameter Silicon Nanowires

Wavelength tunable single nanowire lasers based on surface plasmon polariton enhanced Burstein-Moss effect.

Semiconductor Nanowire Plasmonic Lasers

Studies of hot photoluminescence in plasmonically coupled silicon via variable energy excitation and temperature-dependent spectroscopy

Self-frequency-conversion Nanowire Lasers.

Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

Long-persistent luminescence in near-ultraviolet from silicon nanowires