Abstract:Inorganic semiconductor nanowires is the fundamental connector in on-chip nano-photonic circuitry systems. The optical loss during light propagation as the key parameter influence its performance as waveguide. So accurate determination of optical loss is imperative for the optical information communication between different active and passive optical components. In this work, pumping power dependent optical loss along the tin doped CdS nanowires were investigated. By calculating the out-coupling photoluminescence intensity from one end of a nanowire with respect to the propagation length, the attenuation coefficient of the near band edge emission changed from 0.097 μm−1 to 0.061 μm−1 with the laser power increases. Similarly, with the increasing of excitation power, the attenuation coefficient of the defects related emission can be tuned from 0.098 μm−1 to 0.067 μm−1. In addition, the activation energy is determined to be 34.29 meV by the low temperature photoluminescence experiment, demonstrating the main carriers decay channel is exciton recombination at room temperature (T = 300 K). Therefore, the individual tin doped CdS nanowire photodetector is fabricated and systematically testing. Under a low illumination intensity (142 μW/cm2@405 nm), the detector exhibit a high responsivity of 51.2 A/W, together with the gain of 313.3. Furthermore, the nanowire detector shows stable photos-witching and multi-band response characteristic. Based on the tunable optical loss and broad spectrum response property, the tin doped CdS nanowires used as waveguide or active material can be electively applied in integrated nanophotonic and optoelectronic systems.

Large defect-induced sub-bandgap photoresponse in semiconductor nanowires via waveguiding excitation.

Ultrahigh photoconductivity of bandgap-graded CdS x Se 1 − x nanowires probed by terahertz spectroscopy

Broad Spectral Response in Composition-Graded CdSSe Single Nanowires Via Waveguiding Excitation

Wavelength-converted/selective Waveguiding Based on Composition-Graded Semiconductor Nanowires.

Broadly Defining Lasing Wavelengths in Single Bandgap-Graded Semiconductor Nanowires.

Optical Quenching Of Photoconductivity In Cdse Single Nanowires Via Waveguiding Excitation

Nanowiring Light

Single Mode Lasing in Coupled Nanowires

Manipulating Light with a Single Nanowire

Low-threshold supercontinuum generation in semiconductor nanoribbons by continuous-wave pumping.

Spatial bandgap engineering along single alloy nanowires.

On-nanowire Spatial Band Gap Design for White Light Emission.

An Evanescent Coupling Approach for Optical Characterization of ZnO Nanowires

Tunable optical loss and multi-band photodetection based on tin doped CdS nanowire

Optically Manipulated Nanomechanics of Semiconductor Nanowires*

THE RESEARCH OF QUENCHING EFFECT IN GRADIENT-BANDGAP CdSSe NANOWIRE

Defect Reconstruction Triggered Full-Color Photodetection in Single Nanowire Phototransistor

Bias dependence of sub-bandgap light detection for core-shell silicon nanowires

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

Defect-Related Photoresponse and Polarization-Sensitive Photodetection of Single ZnO Nanowires

Photo-enhanced Field Electron Emission of Cadmium Sulfide Nanowires