Abstract:The coherent developments of high performance broadband photodetection and a discrimination technique are highly essential for multiscene imaging and optical communication applications. The integration of traditional bandpass filters or stacking other spectral absorber in photodetectors often complicates the device design and leads to asymmetric photogain for each waveband. Herein, we report on ultraviolet-visible (UV-vis) multispectral photodetection based on a single ZnO nanowire (NW) phototransistor, where defect reconstructions can be reliably induced by a two-step annealing that leads to the observed broadband photodetection. Electron paramagnetic resonance and photoluminescence spectra reveal the reconstructions of zinc-atom-related defects (i.e., zinc interstitials and vacancies). Combined microdifferential reflectance and multimode scanning probe microscope (SPM) technique confirm the presence of a unique visible-sensitive Zn-rich ZnO shell layer and a trap-free UV-sensitive ZnO core. We achieve not only an ultrahigh carrier mobility (212.4 cm(2) V-1 s(-1)), but also a concurrent improvement for UV-vis photodetection with superior responsivities and detectivities on the orders of 10(5) AW(-1) and 10(15) Jones at 100 mV, respectively, and response speeds less than one second. Moreover, photocurrents under blue, green, and red stimuli can be selectively switched on/off by tuning the gate stress. These high performances in all figures of merit have opened new routes to tailor intrinsic properties of a single NW for optoelectronic applications.

Defect Reconstruction Triggered Full-Color Photodetection in Single Nanowire Phototransistor

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Non-aligned ZnO Nanowires Composited with Reduced Graphene Oxide and Single-Walled Carbon Nanotubes for Highly Responsive UV–visible Photodetectors

High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

Concurrent Improvement of Photocarrier Separation and Extraction in ZnO Nanocrystal Ultraviolet Photodetectors

Photogating-controlled ZnO Photodetector Response for Visible to Near-Infrared Light.

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Defect-Related Photoresponse and Polarization-Sensitive Photodetection of Single ZnO Nanowires

Improved UV Photoresponse Performance of ZnO Nanowire Array Photodetector via Effective Pt Nanoparticle Coupling

When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.

Wide-Bandgap Zn2geo4 Nanowire Networks As Efficient Ultraviolet Photodetectors with Fast Response and Recovery Time

Recent Progresses in Improving Nanowire Photodetector Performances

From UV to Vis Broadband Photodetectors Based on ZnO/CuO/NiO Core–Shell–Shell Heterojunction Nanostructures

High Performance Charge-Transfer Induced Homojunction Photodetector Based on Ultrathin ZnO Nanosheet

Hybrid WSe 2 -In 2 O 3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

High-performance UV photodetection of unique ZnO nanowires from zinc carbonate hydroxide nanobelts.

High-responsivity Photodetection Using a Single P-Type GaAs Nanowire (conference Presentation)

Boosting performances of ZnO microwire homojunction ultraviolet self-powered photodetector by coupled interfacial engineering and plasmonic effects

Toward Facile Broadband Photodetectors Based on Self-Assembled ZnO Nanobridge/rubrene Heterointerface

Fast-speed and High-Gain Photodetectors of Individual Single Crystalline Zn3P2 Nanowires