Abstract:One-dimensional InAs nanowires (NWs) have been widely researched in recent years. Features of high mobility and narrow bandgap reveal its great potential of optoelectronic applications. However, most reported work about InAs NW-based photodetectors is limited to the visible waveband. Although some work shows certain response for near-infrared light, the problems of large dark current and small light on/off ratio are unsolved, thus significantly restricting the detectivity. Here in this work, a novel "visible light-assisted dark-current suppressing method" is proposed for the first time to reduce the dark current and enhance the infrared photodetection of single InAs NW photodetectors. This method effectively increases the barrier height of the metal-semiconductor contact, thus significantly making the device a metal-semiconductor-metal (MSM) photodiode. These MSM photodiodes demonstrate broadband detection from less than 1 μm to more than 3 μm and a fast response of tens of microseconds. A high detectivity of ∼1012 Jones has been achieved for the wavelength of 2000 nm at a low bias voltage of 0.1 V with corresponding responsivity of as much as 40 A/W. Even for the incident wavelength of 3113 nm, a detectivity of ∼1010 Jones and a responsivity of 0.6 A/W have been obtained. Our work has achieved an extended detection waveband for single InAs NW photodetector from visible and near-infrared to mid-infrared. The excellent performance for infrared detection demonstrated the great potential of narrow bandgap NWs for future infrared optoelectronic applications.

High-responsivity Photodetection Using a Single P-Type GaAs Nanowire (conference Presentation)

High-Responsivity Photodetection by a Self-Catalyzed Phase-Pure P-Gaas Nanowire

High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

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Facile sulfur-assisted synthesis of GaAs nanowires /si heterojunctions for broadband self-powered photodetector

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High-Performance Near-Infrared Photodetectors Based on P-Type SnX (X = S, Se) Nanowires Grown Via Chemical Vapor Deposition

Defect Reconstruction Triggered Full-Color Photodetection in Single Nanowire Phototransistor

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Recent Progresses in Improving Nanowire Photodetector Performances

Improving the Performance of a GaAs Nanowire Photodetector Using Surface Plasmon Polaritons

High-detectivity InAs Nanowire Photodetectors with Spectral Response from Ultraviolet to Near-Infrared

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