High-Responsivity Photodetection by Self-Catalyzed Phase-Pure P-GaAs Nanowire

Hassan Ali,Yunyan Zhang,Jing Tang,Kai Peng,Sibai Sun,Yue Sun,Feilong Song,Attia Falak,Shiyao Wu,Chenjiang Qian,Meng Wang,Zhanchun Zuo,Kui-Juan Jin,Ana M. Sanchez,Huiyun Liu,Xiulai Xu

DOI: https://doi.org/10.1002/smll.201704429

2018-04-20

Abstract:Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here, we first developed self-catalyzed p-type GaAs nanowires (NWs) with pure zinc blende (ZB) structure, and then fabricated photodetector made by these NWs. Due to absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photo responsivity of 1.45 x 105 A W^-1 and excellent specific detectivity (D*) up to 1.48 x 10^14 Jones for low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate that these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.

Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Improve the performance of photodetectors based on semiconductor nanowires (NWs), especially enhance the photoresponsivity and specific detectivity by eliminating stacking faults and other deep - level defects**.

### Problem Background:
1. **Influence of Defects on Device Performance**:
- Stacking faults can form carrier - transport barriers.
- Foreign impurities (such as Au) will introduce deep - level traps and non - radiative recombination centers, reducing device performance.

2. **Limitations of Existing Technologies**:
- Nanowires grown with the assistance of foreign catalysts usually contain a large number of defects, affecting the performance of optoelectronic devices.
- These nanowires are not compatible with the complementary metal - oxide - semiconductor (CMOS) process standards because they contain defect states.

### Core Contributions of the Paper:
- **Self - catalytically Grown p - type GaAs Nanowires**:
- Successfully synthesized p - type GaAs nanowires with a pure zinc blende (ZB) structure.
- Eliminated stacking faults and other deep - level defects, significantly improving the quality of the nanowires.

- **High - Performance Photodetectors**:
- The photodetectors fabricated based on these high - quality p - type GaAs nanowires exhibit extremely high photoresponsivity (\( R = 1.45\times10^5 \, \text{A/W} \)) and excellent specific detectivity (\( D^* = 1.48\times10^{14} \, \text{Jones} \)) at room temperature.
- Have excellent response performance to low - intensity optical signals (wavelength 632.8 nm, intensity 0.03 mW/cm²).

### Key Technical Means:
- **Self - catalytic Growth Technology**:
- Avoided the introduction of foreign catalysts (such as Au), reducing deep - level traps and non - radiative recombination centers.

- **Optimized Crystal Structure**:
- GaAs nanowires with a pure ZB structure reduce scattering centers and improve carrier - transport efficiency.

### Summary:
This paper synthesized high - quality p - type GaAs nanowires through self - catalytic growth technology and fabricated high - performance photodetectors using these nanowires. The research results show that this new type of nanowire has great potential in optoelectronic device applications, especially in high - sensitivity optical detection.