Abstract:Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe2 channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA2(MA)3Pb4I13) layer can absorb the light efficiently and provide generous photoexcited holes to WSe2. WSe2 exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf0.5Zr0.5O2) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360-1050 nm), including an ultrahigh ON/OFF current ratio > 109 and low noise-equivalent power of 1.3 fW/Hz1/2, all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm2, while showing a high responsivity of 2.3 × 105 A/W and a specific detectivity of 4.1 × 1014 Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.

Hybrid WSe 2 -In 2 O 3 Phototransistor with Ultrahigh Detectivity by Efficient Suppression of Dark Currents.

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Boosting the Sensitivity of WSe2 Phototransistor Via Janus Interfaces with 2D Perovskite and Ferroelectric Layers.

Boosting the Sensitivity of WSe 2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers

Rational Design of WSe2/WS2/WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity

Ultrasensitive WSe2/MoSe2 Heterojunction Photodetector Enhanced by Photogating Effect

Highly Sensitive and Broadband Photodetectors Based on WSe2/MoS2 Heterostructures with Van Der Waals Contact Electrodes

Deep-ultraviolet SnO2 Nanowire Phototransistors with an Ultrahigh Responsivity

WSe<inf>2</inf>-In<inf>2</inf>O<inf>3</inf> Nanowire Infrared Phototransistor

Ultrasensitive WSe

Synergistic Effect of Hybrid PbS Quantum Dots/2D-WSe2 Toward High Performance and Broadband Phototransistors

Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect

When Nanowires Meet Ultrahigh Ferroelectric Field-High-Performance Full-Depleted Nanowire Photodetectors.

Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe 2 /InSe Heterostructure by a Photogating Effect

Light‐Driven WSe2‐ZnO Junction Field‐Effect Transistors for High‐Performance Photodetection

High Responsivity Photodetectors Based on Graphene/wse2 Heterostructure by Photogating Effect

Design and Construction of Ultra-Thin Mose2 Nanosheet-Based Heterojunction for High-Speed and Low-Noise Photodetection

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe2/MoS2 Van Der Waals Heterojunction

Sensitive and Ultrabroadband Phototransistor Based on Two-Dimensional Bi2O2Se Nanosheets

High Gain, Broadband P-Wse2/n-ge Van Der Waals Heterojunction Phototransistor with a Schottky Barrier Collector

Robust Deposition of Sub‐Millimeter WSe2 Drive Ultrasensitive Gate‐Tunable 2D Material Photodetectors