A Nanocomposite Ultraviolet Photodetector Based on Interfacial Trap-Controlled Charge Injection.
Fawen Guo,Bin Yang,Yongbo Yuan,Zhengguo Xiao,Qingfeng Dong,Yu Bi,Jinsong Huang
DOI: https://doi.org/10.1038/nnano.2012.187
2012-01-01
Abstract:Ultraviolet photodetectors have applications in fields such as medicine, communications and defence 1 , and are typically made from single-crystalline silicon, silicon carbide or gallium nitride p–n junction photodiodes. However, such inorganic photodetectors are unsuitable for certain applications because of their high cost and low responsivity (<0.2 A W −1 ) 2 . Solution-processed photodetectors based on organic materials and/or nanomaterials could be significantly cheaper to manufacture, but their performance so far has been limited 2 , 3 , 4 , 5 , 6 , 7 . Here, we show that a solution-processed ultraviolet photodetector with a nanocomposite active layer composed of ZnO nanoparticles blended with semiconducting polymers can significantly outperform inorganic photodetectors. As a result of interfacial trap-controlled charge injection, the photodetector transitions from a photodiode with a rectifying Schottky contact in the dark, to a photoconductor with an ohmic contact under illumination, and therefore combines the low dark current of a photodiode and the high responsivity of a photoconductor (∼721–1,001 A W −1 ). Under a bias of <10 V, our device provides a detectivity of 3.4 × 10 15 Jones at 360 nm at room temperature, which is two to three orders of magnitude higher than that of existing inorganic semiconductor ultraviolet photodetectors.