Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

The synthesis and photoluminescence properties of selenium-treated porous silicon nanowire arrays.

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Direct Radiative Recombination in the Se-terminated Nanoscale Si Porous Structure

Surface Plasmon Enhanced Photoluminescence from Porous Silicon Nanowires Decorated with Gold Nanoparticles

Photoluminescence Origins of the Porous Silicon Nanowire Arrays

Synthesis and photoluminescence properties of semiconductor nanowires

Tuning the photoluminescence of porous silicon nanowires by morphology control

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Preparation of Photoluminescent Silicon Nanowires Based on Multicrystalline Silicon Wafers

Temperature-dependent Photoluminescence Properties of Porous Silicon Nanowire Arrays

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Effect of annealing on photoluminescence of passivated porous silicon

Laser-induced Greenish-Blue Photoluminescence of Mesoporous Silicon Nanowires

Fabrication and optical properties of mesoporous ZnSe nanosheets@SiO2 nanocomposites

The Effect of Selenization and Post-Annealing on the Photoluminescence Property of Porous Silicon

Near-IR photoluminescence from Si/Ge nanowire grown silicon wafers: effect of HF treatment

Enhanced Blue-Orange-Red Light Emission From Nc-Si:H/Sio2 Pillar Arrays Using Nanosphere Lithography

Influence of Thermal Treatment on Photoluminescence of Porous Si

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

Photoluminescence Enhancement of Si Nanocrystals Embedded in SiO 2 by Thermal Annealing in Air