Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Preparation of Photoluminescent Silicon Nanowires Based on Multicrystalline Silicon Wafers

Fabrication and characterization of polycrystalline silicon nanowires with silver-assistance by electroless deposition

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Preparation and Photovoltaic Properties of Silicon Nanowire Arrays

Preparation and Characterization of Silicon Nanowire Arrays for Solar Cell

Structural and Optical Characteristics of Silicon Nanowires Fabricated by Wet Chemical Etching

Preparation of Silica Nanowires Using Porous Silicon As Si Source

Tuning the photoluminescence of porous silicon nanowires by morphology control

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Controllable Growth of Silicon Nanowire Arrays Fabricated by Two-Step Silver Catalyzed Chemical Etching

Photoluminescence of silicon nanostructures prepared via hydrothermal growth progress

Array-orderly single crystalline silicon nano-wires

FABRICATION OF SILICON NANOWIRE (SiNW) ARRAYS AND APPLICATION IN SOLAR CELL

Synthesis and light emission of fine and straight Si nanowires

Fabrication of silver-coated silicon nanowire arrays for surface-enhanced Raman scattering by galvanic displacement processes

The synthesis and photoluminescence properties of selenium-treated porous silicon nanowire arrays.

Fabrication of antireflective silicon nanowires array

VLS Synthesis of Silicon Nanowires Array for Photovoltaic Devices

Single Crystalline Ordered Silicon Wire/pt Nanoparticle Hybrids for Solar Energy Harvesting

Preparation of Aligned Amorphous Silica Nanowires

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate