In situ photoluminescence studies of photochemically grown porous silicon

Kurt W Kolasinski,John C Barnard,Lynne Koker,Santanu Ganguly,Richard E Palmer

DOI: https://doi.org/10.1016/S0921-5107(99)00243-3

2000-01-01

Abstract:We have used a variety of laser wavelengths (365, 473, 633, 685, 730 nm) to produced porous silicon thin films by photochemically etching n-type Si in 48% HF in aqueous solution. Photoluminescence (PL) has been excited either with 365 or 473 nm light. We have observed the PL spectrum as a function of fabrication wavelength (λfab) and of exposure to the PL excitation laser. We demonstrate that the in situ peak PL emission wavelength (λpeak) depends on the fabrication laser wavelength for λfab≥473 nm and that the redder the λfab, the redder λpeak. For λfab≤473 nm we find λpeak≈550 nm. We have also found that post-growth exposure of a film to 365 or 473 nm light rapidly (on the order of 10 s) and continuously shifts λpeak to a saturation value of 530–550 nm where a steady state is reached. In addition, we have made simultaneous observations of the PL spectrum while a film is grown with λfab=365 or 473 nm. Detectable PL is first observed after ∼100 s. The peak then grows in intensity until a steady value is achieved. λpeak is found to vary little as the peak intensity grows. The observation that redder λfab leads to redder λpeak is consistent with the predictions of quantum confinement for fully hydrogen-terminated porous Si. When exposed to air, λpeak=670–700 nm irrespective of λfab. The latter result suggests that chemisorbed oxygen is important in determining λpeak of air-exposed films.