Abstract:The relationship between minority carrier life and morphology with luminescent properties in porous silicon was studied.The surface morphology of the porous silicon(PS)samples was observed by the field emission scanning electron microscopy(FESEM)and the atom force microscopy(AFM)and microwave photo-conductance decay(μ-PCD)technique was first used to measure the minority carrier lifetime of PS.The results show that the porosity of porous silicon increased with the increase of etched time,which lead to the decrease of minority carrier life and the increase of luminescent efficiency of porous silicon.When the minority carrier life of PS decreases,the irradiative centers on surface of PS increase,which lead to decreasing of photoluminescence(PL)efficiency.Furthermore the results of μ-PCD technique showed the un-uniformity of minority carrier life of PS,which lead to the un-uniformity of PL efficiencies on different location of PS surface.This result proved that the formation of PS is depending on current density and back illumination strength.The results of the PL spectra and the Fourier transform infrared(FTIR)spectra illuminated that the emission came from the formation of surface confined emitters that related to the defects in silicon dioxides and the hydrogen atoms on surface of PS samples played as a key role to dissipate the irradiative centers and increase the PL efficiency.In addition,the result of morphology observation by atomic force microscopy exhibited that the surface of porous silicon became smooth gradually with increase of etched time,which may be related to the chemical etching during the electrochemical etching process.

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

The Influence of Microstructure on Optical Properties of Porous Silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Al-assisted Anodic Etched Porous Silicon

Luminescence and photoconductivity properties of porous polycrystalline silicon

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

Influence of the Surfaces Characteristics on the Luminescent Property of Porous Silicon

Effect of post-treatment processes on the photoluminescence of porous silicon

Relationship Between Minority Carrier Life and Morphology with Luminescent Properties in Porous Silicon

Preparation Of Porous Silicon By Electrochemical Etching Methods And Its Morphological And Optical Properties

Study of Photoconductivity and Photoluminescence of Organic/porous Silicon Complexes

The Study of Photoluminescence Spectra of Porous Silicon Characterized with Double Peaks

Studies on microstructure and photoluminescence property of porous silicon

Study on Preparation of Porous Silicon

Influence of fabrication parameter on the nanostructure and photoluminescence of highly doped p-porous silicon

Characterizations And Luminescence Properties Of Annealed Porous Silicon Films

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying

Structure and Photoluminescence Properties of the Quasi-Regular Arrangements of Porous Silicon

Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities