Novel simple and effective past-treatment technique of porous silicon

Zuhong Xiong,Xiaobing Liu,Liangsheng Liao,Shuai Yuan,Jun He,Xiangfeng Zhou,Xian'an Cao,Xunmin Ding,Xiaoyuan Hou

1998-01-01

Abstract:A novel, simple and effective post-treatment technique of porous silicon (PS), immersing PS in the (NH4)2S/C2H5OH solution illuminated under the ultraviolet light, is reported. Compared with the as-etched PS, the PL intensity of the post-treated sample is 5 times stronger, and there is no red-shift or blue shift of the PL peak. Moreover, during the illumination of the laser light, the PL intensity at the peak position decays exponentially at first for several minutes and then linearly rises in atmosphere, while it decays all the way and finally reaches a stable value in vacuum. FTIR spectrum indicates that the SiH(O3), Si-O-Si and Si3N4 cover the treated sample surface and form good passivation films.