Abstract:Porous silicon (PS) fabricated by anodizing have recently become the subject of intense interest due to their room temperature visble light emission properties. However, highly porous silicon made by electrochemical etching is fragile and tends to craze during normal drying in air after taken out from HF based solution. The preparation of highly porous materials by sol-gel processing followed by supercritical drying was carried out by Kistler in 1931. Since 1985, the supercritical drying (SD) has been used successfully to prepare a variety of aerogels, comprising a void fraction of more than 90%. This technigue has now been applied to prepare luminescent porous silicon on both < 100 > and < 110 > C-Si substrates. Porosities up to 94% have been achieved, which were determined by gravimetric measurement. Its morphological feature, microstructure and photoluminescence properties exhibit novel characteristics from those conventionally anodizied propous silicon. It has been demonstrated that anodization and supercritical drying can yield ultra-high porous luminescent PS with minimal damage and much higher degree of perfection than that of previously attained. It is very interested that the PL intensity may be inproved by SD method.

Vapor-Phase Silanization of Oxidized Porous Silicon for Stabilizing Composition and Photoluminescence

In Situ Silanization Reaction on the Surface of Freshly Prepared Porous Silicon

Hydrolysis and silanization of the hydrosilicon surface of freshly prepared porous silicon by an amine catalytic reaction

Effect of post-treatment processes on the photoluminescence of porous silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Stability Improvement of Porous Silicon Surface Structures by Grafting Polydimethylsiloxane Polymer Monolayers

Al-assisted Anodic Etched Porous Silicon

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying

Novel simple and effective past-treatment technique of porous silicon

Photoluminescence of oxidized porous silicon under UV-light illumination

Effects of O, H and N passivation on photoluminescence from porous silicon

The Influence of Microstructure on Optical Properties of Porous Silicon

Improving the stability of porous silicon photoluminescence by damp oxidation

Passivation of Porous Silicon by Wet Thermal Oxidation

Effect of Laser Illumination on Oxidization of Porous Silicon

IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION

Effective Passivation on Si Nanocrystal Surface by Peroxide

Stabilized Electronic State and Its Luminescence at the Surface of Oxygen-Passivated Porous Silicon

Preparation of Organic Monolayers with Azide on Porous Silicon Via Si–N Bonds