Preparation of porous silicon by pulse etching method

HongLei Fan,Xiaoyuan Hou,Zheshen Li,Fulong Zhang,MingRen Yu,Xun Wang

1995-01-01

Abstract:Pulse etching method was adopted to study the dynamical etching process in preparing porous silicon. The relationship between the dynamical current and etching time was measured and was supposed to be due to the dynamical process of the reduction of HF in the etching holes and the diffusion of HF outside. Porous silicon samples prepared by pulse etching process have better uniformity, stronger luminescence intensity and some blueshift in PL spectra compared with the samples prepared by constant current etching process. It is a better method in preparing porous silicon.