Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

Pulsed Anodic Etching: an Effective Method of Preparing Light-Emitting Porous Silicon

Preparation of porous silicon by pulse etching method

A novel method of fabricating porous silicon material: ultrasonically enhanced anodic electrochemical etching

Flat Layered Structure and Improved Photoluminescence Emission from Porous Silicon Microcavities Formed by Pulsed Anodic Etching

Al-assisted Anodic Etched Porous Silicon

Studies on microstructure and photoluminescence property of porous silicon

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method

A New Method to Achieve the Blue/Green Light-Emitting from Porous Silicon

Effect of chemical etching combined with laser illumination on the photoluminescence of porous silicon

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

Atomic Force Microscopic Studies of Light-Emitting Porous Silicon

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

Luminescence and photoconductivity properties of porous polycrystalline silicon

Photoluminescence of Erbium-doped porous silicon prepared by anodic etching of molecular beam epitaxial growth

Annealing and amorphous silicon passivation of porous silicon with blue light emission