Photoluminescence of Erbium-doped porous silicon prepared by anodic etching of molecular beam epitaxial growth

LanLan Gu,Zuhong Xiong,Gang Chen,Shaohui Xu

DOI: https://doi.org/10.7498/aps.49.383

2000-01-01

Abstract:A new method for fabricating Er-doped porous silicon is presented. The sample is prepared by anodization of the Er-doped silicon grown by molecular beam epitaxy. A pretty narrow 1.533 μm emission with a full width at half maximum (FWHM) of 3meV is achieved, which reflects the uniformity of doping Er in the Si nanostructure. Meanwhile, there is no need to employ high temperature procedure to incorporate oxygen into the PSi:Er matrix since the codoping of O and Er has already been achieved before the anodization. We demonstrate the direct comparison of the photoluminescence between the anodized PSi:Er and the Si:Er grown by MBE. The influence of the visible light and the infrared luminescence bands on the emission of the Er3+ is also discussed.