Abstract:We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n(+)-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n(+)-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x <= 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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1.53νm photo-and electroluminescence from Er3+ in erbium silicate

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1.53 µm photo- and electroluminescence from Er(3+) in erbium silicate.

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

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Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Energy transfer from luminescent centers to Er 3+ in erbium-doped silicon-rich oxide films

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer