Abstract:Erbium-implanted silicon is considered as a promising system to realize electrically-pumped light sources at communication band due to the stable luminescence of Er ions at 1536nm. However, this system suffers from an extremely low luminescence efficiency at room temperature. Quantitatively understanding the energy transfer processes in the system is critical to improving the Er luminescent efficiency, which unfortunately remains ambiguous. In this article, we managed to establish a complete methodology that can quantitatively describe the energy transfer processes from Si to Er. We first employed the Kohlrausch's function to analyze the transient photoluminescence (PL) of Er in silicon at different temperatures, from which we found the emission flux and effective decay rate of excited Er ions in steady-state. These extracted parameters were used in the widely accepted energy transfer processes to analyze Er PL behaviors as a function of temperature (80K-300K) and excitation power. Interestingly, we managed to quantitively find almost all important physical parameters of the energy transfer process including the energy transfer efficiency from Er-related defects to Er ions (21.6% at room temperature), the PhotoLuminescence Quantum Yield (0.45% at room temperature) and a record high optical active Er concentration (2×1019 cm-3). Further careful analysis indicates that the Er/O/B doped silicon has a potential to reach a PLQY of 3.5% if the defects in Si bandgap are properly passivated.

Energy transfer from luminescent centers to Er 3+ in erbium-doped silicon-rich oxide films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Quantification of energy transfer processes from crystalline silicon to Erbium

Enhanced Luminescence of Erbium Silicate: Interstitial Lithium Directly Regulates the Lattice Structure of Erbium Compound Crystals

Mechanism on Exciton-Mediated Energy Transfer in Erbium-Doped Silicon

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Strong Energy-Transfer-Induced Enhancement of Er3+ Luminescence in In2o3 Nanocrystal Codoped Silica Films

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

Effects of Oxygen Vacancies on the Optical and Electrical Performances of Silicon-Based Er Doped Ga2O3 Films

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films