Abstract:Erbium-implanted silicon is considered as a promising system to realize electrically-pumped light sources at communication band due to the stable luminescence of Er ions at 1536nm. However, this system suffers from an extremely low luminescence efficiency at room temperature. Quantitatively understanding the energy transfer processes in the system is critical to improving the Er luminescent efficiency, which unfortunately remains ambiguous. In this article, we managed to establish a complete methodology that can quantitatively describe the energy transfer processes from Si to Er. We first employed the Kohlrausch's function to analyze the transient photoluminescence (PL) of Er in silicon at different temperatures, from which we found the emission flux and effective decay rate of excited Er ions in steady-state. These extracted parameters were used in the widely accepted energy transfer processes to analyze Er PL behaviors as a function of temperature (80K-300K) and excitation power. Interestingly, we managed to quantitively find almost all important physical parameters of the energy transfer process including the energy transfer efficiency from Er-related defects to Er ions (21.6% at room temperature), the PhotoLuminescence Quantum Yield (0.45% at room temperature) and a record high optical active Er concentration (2×1019 cm-3). Further careful analysis indicates that the Er/O/B doped silicon has a potential to reach a PLQY of 3.5% if the defects in Si bandgap are properly passivated.

Quantification of energy transfer processes from crystalline silicon to Erbium

Efficient Sensitized Photoluminescence from Erbium Chloride Silicate Via Interparticle Energy Transfer

Highly Efficient Energy Transfer from Silicon to Erbium in Erbium-Hyperdoped Silicon Quantum Dots

Near-infrared Luminescence of Erbium Doped Ga2O3 Films and Devices Based on Silicon: Realization of Energy Transfer

Fluorescence Optimization and Ratiometric Thermometry of Near-Infrared Emission in Erbium/oxygen-Doped Crystalline Silicon

Mechanism on Exciton-Mediated Energy Transfer in Erbium-Doped Silicon

Sensitized Photoluminescence of Erbium Silicate Synthesized on Porous Silicon Framework

Stimulated emission at 154 μm from erbium/oxygen-doped silicon-based light-emitting diodes

Stimulated Emission at 1.54 M from Erbium/oxygen-Doped Silicon-Based Light-Emitting Diodes

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Energy transfer from luminescent centers to Er 3+ in erbium-doped silicon-rich oxide films

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Photoluminescence Measurement on Erbium-Doped Silicon

Sensitized Electroluminescence from Erbium Doped Silicon Rich Oxynitride Light Emitting Devices

Low-voltage Driven ∼1.54 Μm Electroluminescence from Erbium-Doped ZnO/p+-Si Heterostructured Devices: Energy Transfer from ZnO Host to Erbium Ions

Fluorine‐Enhanced Room Temperature Luminescence of Er‐Doped Crystalline Silicon

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Theoretical and experimental evaluation of multilayer porous silicon structures for enhanced erbium up-conversion luminescence

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process