Abstract:Er-doped Si-rich SiO2 (SRSO:Er) films have been deposited on n+-Si substrates by the magnetron sputtering technique, and both photoluminescence (PL) and electroluminescence (EL) at 1.54 μm have been observed from the films at room temperature. Dependence of PL and EL intensities on the excess-Si content and annealing temperature has been studied. It is found that proper Si content and annealing temperature can evidently enhance EL intensity. An SRSO:Er film with 20% excess Si (area ratio of the Si target to the whole target) had more intense EL than a SiO2:Er film without excess Si, both annealed at 800°C, by a factor of 5. This fact clearly demonstrates that energy coupling between Si nanometer particles and Er3+ ions also exists in the EL process as well as in the PL process. Experimental results also indicate that crystallization is not a prerequisite for NSPs enhancing luminescence in SRSO:Er films. The PL and EL spectra of the SRSO:Er films have much broader full widths at half maximum (FWHM, ∼60 nm) than those of the other Er-doped materials reported. This wide FWHM can perhaps be used in wavelength division multiplexing in optical communication in future.

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

Modulation Effect of Microstructures in Silicon-Rich Oxide Matrix on Photoluminescence from Silicon Nanoclusters Prepared by Different Fabrication Techniques

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Energy transfer from luminescent centers to Er 3+ in erbium-doped silicon-rich oxide films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

Evolution of the Sensitized Er 3+ Emission by Silicon Nanoclusters and Luminescence Centers in Silicon-Rich Silica

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Control of the Formation and Luminescent Properties of Polymorphic Erbium Silicates on Silicon

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Sensitization of Er3+ Ions in Silicon Rich Oxynitride Films: Effect of Thermal Treatments

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Correlation of Efficient Luminescence with Crystal Structures of Y-Er2si2o7 and Α-Er2si2o7 in Er-doped Silicon Oxide Films

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Enhancement of Er3+ emission from an Er-Si codoped Al 2O3 film by stacking Si-doped Al2O3 sublayers

The Luminescence Enhancement Of Eu3+ Ion And Sno2 Nanocrystal Co-Doped Sol-Gel Sio2 Films

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers