Abstract:The Er3+-doped Al2O3 films were prepared by sintering Er-ion-implanted γ-AlOOH xerogel films on SiO2/Si(100) substrates. In a cycle, the γ-AlOOH xerogel films about 50 nm thick were dip-coated using aluminium isopropoxide-derived γ-AlOOH sols; the Er ions were then implanted into the γ-AlOOH xerogel films using an ion energy of 45 keV with different doses of 5×1014 to 1×1016 ions cm−2. Er3+-doped Al2O3 films were formed after 1, 2, and 4 cycles of dip-coating and implantation at different sintering temperatures of 800–1200 °C. The photoluminescence (PL) spectra were observed with a main peak at 1.533 μm and a side peak at 1.549 μm for all the Er3+-doped Al2O3 films. The intensity of PL peak of the Er3+-doped Al2O3 film obtained after 4 cycles with 5×1015 ions cm−2 dose at every cycle and sintered at 900 °C for 5 h, increased by about 10 and 3 times compared with that of the films obtained after 1 and 2 cycles. At the same sintering temperature of 900 °C, the intensity of PL peak of the Er3+-doped Al2O3 films first increased with the increase of dose from 5×1014 to 5×1015 ions cm−2 at every cycle, and then a saturation tendency was observed when the dose further was increased to 1×1016 ions cm−2. For the samples using 5×1015 ions cm−2 dose at every cycle, the PL intensity increased with the increase of sintering temperature from 800 to 1200 °C.

Enhancement of Er3+ emission from an Er-Si codoped Al 2O3 film by stacking Si-doped Al2O3 sublayers

Enhanced Emission of Er3+ from Alternately Er Doped Si-Rich Al2o3 Multilayer Film with Si Nanocrystals As Broadband Sensitizers

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Er3+ related 1.53μm emission from Er–Si-codoped ZnO multilayer film prepared by rf-sputtering

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

Efficient Sensitized Photoluminescence of Er Silicate in Silicon Oxide Films Embedded with Amorphous Silicon Clusters, Part I: Fabrication

An Effect of Si Nanoparticles on Enhancing Er3+ Electroluminescence in Si-rich SiO2:Er Films

Effects of Excess Silicon on the 1540 Nm Er3+ Luminescence in Silicon Rich Oxynitride Films

Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel

Enhancement of Sensitized Photoluminescence of Erbium Chloride Silicate Through Regulating Annealing

Electroluminescence from Metal–oxide–semiconductor Devices Based on Erbium Silicate Nanocrystals and Silicon Nanocrystals Co-Embedded in Silicon Oxide Thin Films

Correlation Of Efficient Luminescence With Crystal Structures Of Y-Er2si2o7 And Alpha-Er2si2o7 In Er-Doped Silicon Oxide Films

Dependence of 1.54 Mu M Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich Sio2 Films Deposited by Magnetron Sputtering

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Enhanced Luminescence of Erbium Doped Ga2O3 Films and Devices by Optimizing Annealing Process

The Modulation on Luminescence of Er3+-doped Silicon-Rich Oxide Films by the Structure Evolution of Silicon Nanoclusters.

Enhanced Crystallization and Sensitization of Si Nanocrystals in Al2O3:Er/Si:Er Multilayers

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

[Photoluminescence from Er-doped Silicon-Rich Silicon Oxide Film and Er-doped Silicon-Rich Silicon Nitride Film and Its Annealing Behavior].

Photoluminescence of Erbium–oxygen-Codoped Silicon Multilayers Prepared by Molecular Beam Epitaxy