Photoluminescence Properties of Er3+-doped Al2O3 Film Synthesized from Er-ion-implanted Γ-Alooh Xerogel

XJ Wang,MK Lei

DOI: https://doi.org/10.1016/j.tsf.2005.11.004

IF: 2.1

2006-01-01

Thin Solid Films

Abstract:The Er3+-doped Al2O3 films were prepared by sintering Er-ion-implanted γ-AlOOH xerogel films on SiO2/Si(100) substrates. In a cycle, the γ-AlOOH xerogel films about 50 nm thick were dip-coated using aluminium isopropoxide-derived γ-AlOOH sols; the Er ions were then implanted into the γ-AlOOH xerogel films using an ion energy of 45 keV with different doses of 5×1014 to 1×1016 ions cm−2. Er3+-doped Al2O3 films were formed after 1, 2, and 4 cycles of dip-coating and implantation at different sintering temperatures of 800–1200 °C. The photoluminescence (PL) spectra were observed with a main peak at 1.533 μm and a side peak at 1.549 μm for all the Er3+-doped Al2O3 films. The intensity of PL peak of the Er3+-doped Al2O3 film obtained after 4 cycles with 5×1015 ions cm−2 dose at every cycle and sintered at 900 °C for 5 h, increased by about 10 and 3 times compared with that of the films obtained after 1 and 2 cycles. At the same sintering temperature of 900 °C, the intensity of PL peak of the Er3+-doped Al2O3 films first increased with the increase of dose from 5×1014 to 5×1015 ions cm−2 at every cycle, and then a saturation tendency was observed when the dose further was increased to 1×1016 ions cm−2. For the samples using 5×1015 ions cm−2 dose at every cycle, the PL intensity increased with the increase of sintering temperature from 800 to 1200 °C.